1.5A HIGH-SPEED 30V MOSFET DRIVERS
1
2
3
4
5
6
7
8
TC4431
TC4432
ELECTRICAL CHARACTERISTICS (Cont.): Specifications measured over operating temperature range
with 5.0V ≤ VDD ≤ 30V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current (Note 1)
2.4
—
—
—
—
—
0.8
1
V
VIL
V
IIN
0V ≤ VIN ≤ VDD (16V MAX)
IOUT = 100mA
– 1
µA
Output
VOH
VOL
High Output Voltage
Low Output Voltage
Output Resistance
VDD – 1.2
—
—
—
—
0.025
12
V
V
Ω
—
—
RO
VDD = 30V, IO = 10mA
Switching Time (Note 2)
tR
Rise Time
Figure 1
Figure 1
Figure 1
Figure 1
—
—
—
—
—
—
—
—
60
70
nsec
nsec
nsec
nsec
tF
Fall Time
tD1
Delay Time
Delay Time
100
110
tD2
Power Supply
IS
Power Supply Current
VIN = 3V
VIN = 0V
—
—
—
—
6
mA
0.7
VS
Start-up Threshold
Drop-out Threshold
—
7
8.4
7.7
10
—
V
V
VDO
(Note 3)
NOTES: 1. For inputs >16V, add a 1kΩ resistor in series with the input. See graph on page 4 for input current.
2. Switching times are guaranteed by design.
3. For operation below 7V, the LOCK DIS., Pin 3 can be grounded to disable the lockout and start-up circuit.
PIN CONFIGURATIONS
1
2
3
4
V
1
2
8
7
6
5
8 V
V
V
DD
IN
DD
DD
DD
IN
OUT
OUT
GND
7
6
5
OUT
TC4431
TC4432
OUT
LOCK DIS 3
LOCK DIS
GND
4
GND
GND
7
7
6
2
2
6
INVERTING
NONINVERTING
NOTE: SOIC pinout is identical to DIP.
TELCOM SEMICONDUCTOR, INC.
4-259
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
