1.5A HIGH-SPEED 30V MOSFET DRIVERS
TC4431
TC4431
Operating Temperature Range
ABSOLUTE MAXIMUM RATINGS*
C Version ............................................... 0°C to +70°C
E Version ...........................................- 40°C to +85°C
Package Power Dissipation (TA ≤ 70°C )
Supply Voltage ............................................................36V
Input Voltage (Note 1) ........................ VDD + 0.3V to GND
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmay
affect device reliability.
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 250°C/W
SOIC RθJ-C ..................................................... 75°C/W
ELECTRICAL CHARACTERISTICS: TA = +25°C with 5.0 ≤ VDD ≤ 30V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current (Note 1)
2.4
—
—
—
—
—
0.8
1
V
VIL
V
IIN
0V ≤ VIN ≤ VDD (16V MAX)
–1
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
IOUT = 100mA
VDD – 1.0 VDD – 0.8
—
0.025
10
V
V
Ω
A
—
—
—
7
Output Resistance (VOL
)
VDD = 30V, IO = 10mA
Source: VDD = 30V
Sink: VDD = 30V
IPK
Peak Output Current
—
3.0
1.5
—
—
—
—
IREV
Latch-Up Protection
Withstand Reverse Current
Duty Cycle ≤ 2%
t ≤ 300 µsec
0.3
—
A
Switching Time (Note 2)
tR
Rise Time
Fall Time
Figure 1
Figure 1
Figure 1
Figure 1
—
—
—
—
25
33
62
78
40
50
80
90
nsec
nsec
nsec
nsec
tF
tD1
Delay Time
Delay Time
tD2
Power Supply
IS
Power Supply Current
VIN = 3V
VIN = 0V
—
—
2.5
0.3
4
0.4
mA
VS
Start-up Threshold
Drop-out Threshold
—
7
8.4
7.7
10
—
V
V
VDO
(Note 3)
4-258
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
