1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B. (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmay
affect device reliability.
PIN CONFIGURATIONS
NC
1
2
3
4
NC
IN A
GND
IN B
1
2
3
4
NC
IN A
GND
IN B
1
2
3
4
8
7
6
5
8
7
6
5
NC
8
7
6
5
NC
NC
IN A
GND
OUT A
OUT A
OUT A
TC4426
TC4427
TC4428
V
V
V
DD
DD
DD
OUT B
OUT B
IN B
OUT B
2
4
7
5
2,4
7,5
2,4
7,5
INVERTING
NONINVERTING
DIFFERENTIAL
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
1
V
VIL
V
IIN
0V ≤ VIN ≤ VDD
– 1
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
VDD – 0.025
—
—
7
—
0.025
10
V
V
Ω
A
A
—
—
VDD = 18V, IO = 10 mA
IPK
Duty Cycle ≤ 2%, t ≤ 30 µsec
Duty Cycle ≤ 2%
t ≤ 30 µsec
—
1.5
—
—
IREV
Latch-Up Protection
Withstand Reverse Current
> 0.5
—
Switching Time (Note 1)
tR
Rise Time
Fall Time
Figure 1
Figure 1
Figure 1
Figure 1
—
—
—
—
19
19
20
40
30
30
30
50
nsec
nsec
nsec
nsec
tF
tD1
Delay Time
Delay Time
tD2
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
—
—
—
—
4.5
0.4
mA
mA
NOTE: 1. Switching times are guaranteed by design.
4-246
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
