1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426A
TC4427A
TC4428A
Operating Temperature Range
ABSOLUTE MAXIMUM RATINGS*
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B .. (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmay
affect device reliability.
ELECTRICAL CHARACTERISTICS:
Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless
otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
—
—
—
—
V
VIL
0.8
V
IIN
– 0V ≤ VIN ≤ VDD
TA = 25°C
– 40°C ≤ TA ≤ 85°C
– 1
– 10
—
—
1
10
µA
Output
VOH
High Output Voltage
Low Output Voltage
Output Resistance
DC Test
DC Test
VDD – 0.025
—
—
—
—
V
V
Ω
VOL
0.025
RO
VDD = 18V, IO = 10mA TA = 25°C
0°C ≤ TA ≤ 70°C
—
—
—
7
7
8
9
10
11
– 40° ≤ TA ≤ 85°C
IPK
Peak Output Current
Latch-Up Protection
Withstand Reverse Current t ≤ 300µsec
VDD = 18V
—
1.5
—
—
—
A
A
IREV
Duty Cycle ≤ 2%
VDD = 18V
0.5
Switching Time (Note 1)
tR
Rise Time
Figure 1
Figure 1
Figure 1
Figure 1
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
25
27
29
35
40
40
nsec
nsec
nsec
nsec
tF
Fall Time
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
25
27
29
35
40
40
tD1
Delay Time
Delay Time
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
30
33
35
35
40
45
tD2
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
30
33
35
35
40
45
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs) VDD = 18V
VIN = 0V (Both Inputs)
—
—
1.0
0.1
2.0
0.2
mA
NOTE: 1. Switching times are guaranteed by design.
4-252
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
