6A HIGH-SPEED MOSFET DRIVERS
1
2
3
4
5
6
7
8
TC4420
TC4429
ELECTRICAL CHARACTERISTICS:
Measured over operating temperature range with 4.5V ≤ VDD ≤ 18V,
unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Voltage Range
Input Current
2.4
—
—
—
—
—
—
0.8
V
VIL
V
VIN (Max)
IIN
– 5
– 10
VDD + 0.3
10
V
0V ≤ VIN ≤ VDD
µA
Output
VOH
High Output Voltage
Low Output Voltage
See Figure 1
VDD – 0.025
—
—
3
—
0.025
5
V
V
Ω
Ω
VOL
See Figure 1
—
—
—
RO
Output Resistance, High
Output Resistance, Low
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
RO
2.3
5
Switching Time (Note 1)
tR
Rise Time
Fall Time
Figure 1, CL = 2500 pF
Figure 1, CL = 2500 pF
Figure 1
—
—
—
—
32
34
50
65
60
60
nsec
nsec
nsec
nsec
tF
tD1
Delay Time
Delay Time
100
100
tD2
Figure 1
Power Supply
IS
Power Supply Current
Operating Input Voltage
VIN = 3V
VIN = 0V
—
—
0.45
60
3
400
mA
µA
VDD
4.5
—
18
V
NOTE: 1. Switching times guaranteed by design.
V
= 18V
DD
1µF
+5V
90%
1
8
INPUT
0.1µF
0.1µF
10%
0V
t
t
t
F
D1
D2
t
R
2
6
7
+18V
INPUT
OUTPUT
90%
90%
OUTPUT
0V
C = 2500pF
L
10%
10%
TC4429
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10 nsec
4
5
Figure 1. Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
4-227
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
