1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
1
2
3
4
5
6
7
8
TC4404
TC4405
ELECTRICAL CHARACTERISTICS: Specifications measured over operating temperature range
with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
10
V
VIL
V
IIN
– 0V ≤ VIN ≤ VDD
– 10
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
Output Resistance
VDD – 0.025
—
—
9
—
0.025
12
V
—
—
V
IOUT = 10 mA, VDD = 18V; Any Drain
Ω
IPK
Peak Output Current (Any Drain) Duty cycle <2%, t ≤ 300µsec
—
1.5
—
—
—
A
IDC
Continuous Output Current (Any Drain)
—
100
—
mA
mA
IR
Latch-Up Protection (Any Drain) Duty cycle <2%, t ≤ 300µsec
>500
Withstand Reverse Current
Switching Time (Note 1)
tR
Rise Time
Fall Time
Figure 1, CL = 1000 pF
Figure 1, CL = 1000 pF
Figure 1, CL = 1000 pF
Figure 1, CL = 1000 pF
—
—
—
—
—
—
—
—
40
40
40
60
nsec
nsec
nsec
nsec
tF
tD1
tD2
Delay Time
Delay Time
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
—
—
—
—
8
0.6
mA
NOTE
1. Switching times guaranteed by design.
Circuit Layout Guidelines
tantalum) be placed as close to the driver as possible. The
driver should be physically located as close to the device it
is driving as possible to minimize the length of the output
trace.
Avoid long power supply and ground traces (added
inductancecausesunwantedvoltagetransients).Usepower
and ground planes wherever possible. In addition, it is
advisable that low ESR bypass capacitors (4.7µF or 10µF
PIN CONFIGURATIONS (DIP AND SOIC)
V
V
A TOP
A TOP
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
DD
DD
IN A
IN B
A BOTTOM
B TOP
IN A
IN B
A BOTTOM
B TOP
TC4404
TC4404
COM
B BOTTOM
COM
B BOTTOM
V
V
A TOP
A TOP
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
DD
DD
IN A
IN B
A BOTTOM
B TOP
IN A
IN B
A BOTTOM
B TOP
TC4405
TC4405
COM
B BOTTOM
COM
B BOTTOM
TELCOM SEMICONDUCTOR, INC.
4-221
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
