PRELIMINARY INFORMATION
LINEAR BUILDING BLOCK –
VOLTAGE REFERENCE, DUAL OP AMP,
DUAL COMPARATOR WITH SHUTDOWN MODE
TC43
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ..............................................................6V
Package Power Dissipation (
* Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
T
A ≤ 70°C)
PDIP ..............................................................840mW
SOIC (Narrow) ................................................700mW
Voltage on Any Pin:
(With Respect to GND) ........(VSS – 0.3V) to (VDD +0.3V)
Operating Temperature Range:
C Suffix ................................................. 0°C to +70°C
E Suffix ............................................ – 40°C to + 85°C
ELECTRICAL CHARACTERISTICS: TA = Over Operating Temperature Range, VDD = 5.0V ±10%, VSS = 0V,
SHDN = VDD, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VDD
IQ
Supply Voltage
1.8
—
—
10
5
5.5
15
8
V
Supply Current, Operating
Supply Current, Shutdown Mode
All Outputs Open
µA
µA
ISHDN
All Outputs Open
(Note 1)
—
Shutdown Input
VIH
Input High Voltage
Input Low Voltage
Input Current
80% VDD
—
—
—
—
20% VDD
1
V
V
VIL
—
—
IIL
µA
Op Amps
TSEL
Select Time (VOUT from SHDN = VIH)
Deselect Time (HI-Z from SHDN = VIL)
Large Signal Voltage Gain
Common Mode Input Voltage Range
Input Offset Voltage
—
—
2
5
—
msec
µsec
dB
TDESEL
AVOL
VICMR
VOS
—
CL = 100pF, RL = 47kΩ
1.8 < VDD < 5.5V
—
100
—
±1.0
50
30
7
—
VDD – 1.0
+10
—
VSS
–10
—
V
VCM = (VDD – VSS)/2
mV
IB
Input Bias Current
pA
VOS (DRIFT)
GBWP
SR
Average Input Offset Voltage Drift
Gain-Bandwidth Product
—
—
µV/°C
kHz
4
—
Slew Rate
Gain = 1, VIN = 4.0P-P
CL = 100pF, RL = 1MΩ
to VSS
—
2
—
V/msec
VOUT
Output Signal Swing
RL = 47kΩ
VSS + .20
—
80
80
—
40
8
VDD – .15
V
CMRR
PSRR
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Output Resistance in Shutdown
Output Capacitance in Shutdown
DC Output Source Current
—
—
20
—
3
—
—
—
55
20
dB
dB
MΩ
pF
(4.5V to 5.5V)
ROUT(SD)
COUT(SD)
ISRC
SHDN = VSS
SHDN = VSS (Note 5)
VIN = VDD
mA
Output Shorted to VSS
(Note 2)
ISINK
DC Output Sink Current
VIN = VSS
Output Shorted to VDD
(Note 2)
0.6
—
1.2
5
5
mA
Comparators
TSEL
CMPTR1 Select Time
—
µsec
(VOUT from SHDN = VIH)
2
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