6A SINGLE HIGH-SPEED,
CMOS POWER MOSFET DRIVER
1
2
3
4
5
6
7
8
TC429
ELECTRICAL CHARACTERISTICS: Over operating temperature with 7V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
10
V
VIL
V
IIN
0V ≤ VIN ≤ VDD
– 10
µA
Output
VOH
VOL
High Output Voltage
Low Output Voltage
Output Resistance
VDD – 0.025
—
—
—
—
0.025
5
V
V
Ω
—
—
RO
VIN = 0.8V,
IOUT = 10 mA, VDD = 18V
VIN = 2.4V,
—
—
5
IOUT = 10 mA, VDD = 18V
Switching Time (Note 1)
tR
Rise Time
Figure 1, CL = 2500pF
Figure 1, CL = 2500pF
Figure 1
—
—
—
—
—
—
—
—
70
70
nsec
nsec
nsec
nsec
tF
Fall Time
tD1
Delay Time
Delay Time
100
120
tD2
Figure 1
Power Supply
IS
Power Supply Current
VIN = 3V
VIN = 0V
—
—
—
—
12
1
mA
NOTE: 1. Switching times guaranteed by design.
SWITCHING SPEED
V
= 18V
DD
1 µF
0.1 µF
1
8
2
6
7
INPUT
OUTPUT
C = 2500 pF
L
TC429
4
5
INPUT: 100 kHz, square wave
= t ≤ 10 nsec
t
RISE FALL
+5V
90%
INPUT
0V
10%
t
t
D2
D1
90%
10%
t
t
R
F
18V
90%
OUTPUT
10%
0V
Figure 1. Inverting Driver Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
4-177
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
