6A SINGLE HIGH-SPEED,
CMOS POWER MOSFET DRIVER
TC429
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, Any Terminal ..... VDD +0.3V to GND – 0.3V
Power Dissipation (TA ≤ 70°C)
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
Derating Factors
Plastic DIP ............................ 5.6 mW/°C Above 36°C
CerDIP ...................................................... 6.4 mW/°C
Operating Temperature Range
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
C Version ............................................... 0°C to +70°C
I Version ........................................... – 25°C to +85°C
E Version .......................................... – 40°C to +85°C
M Version .......................................– 55°C to +125°C
ELECTRICAL CHARACTERISTICS:
TA = +25°C with 7V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
2.4
—
1.8
1.3
—
—
0.8
10
V
VIL
V
IIN
0V ≤ VIN ≤ VDD
– 10
µA
Output
VOH
VOL
High Output Voltage
Low Output Voltage
Output Resistance
VDD – 0.025
—
—
—
0.025
2.5
V
V
Ω
—
—
RO
VIN = 0.8V,
1.8
I
OUT = 10mA, VDD = 18V
VIN = 2.4V,
—
—
1.5
6
2.5
—
IOUT = 10mA, VDD = 18V
VDD = 18V (See Figure 3)
IPK
Peak Output Current
A
Switching Time (Note 1)
tR
Rise Time
Figure 1, CL = 2500pF
Figure 1, CL = 2500pF
Figure 1
—
—
—
—
23
25
53
60
35
35
75
75
nsec
nsec
nsec
nsec
tF
Fall Time
tD1
Delay Time
Delay Time
tD2
Figure 1
Power Supply
IS
Power Supply Current
VIN = 3V
VIN = 0V
—
—
3.5
0.3
5
mA
0.5
NOTES: 1. Switching times guaranteed by design.
4-176
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
