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TC426COA 参数 Datasheet PDF下载

TC426COA图片预览
型号: TC426COA
PDF下载: 下载PDF文件 查看货源
内容描述: 1.5A双高速功率MOSFET驱动器 [1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS]
分类和应用: 驱动器接口集成电路光电二极管PC
文件页数/大小: 5 页 / 78 K
品牌: TELCOM [ TELCOM SEMICONDUCTOR, INC ]
 浏览型号TC426COA的Datasheet PDF文件第1页浏览型号TC426COA的Datasheet PDF文件第3页浏览型号TC426COA的Datasheet PDF文件第4页浏览型号TC426COA的Datasheet PDF文件第5页  
1.5A DUAL HIGH-SPEED  
POWER MOSFET DRIVERS  
TC426  
TC427  
TC428  
CerDIP ......................................................... 6.4mW/°C  
SOIC ............................................................... 4mW/°C  
Operating Temperature Range  
C Version ................................................. 0°C to +70°C  
I Version..............................................25°C to +85°C  
E Version ............................................ – 40°C to +85°C  
M Version.......................................... – 55°C to +125°C  
Maximum Chip Temperature................................. +150°C  
Storage Temperature Range ................ – 65°C to +150°C  
Lead Temperature (Soldering, 10 sec) ................. +300°C  
ABSOLUTE MAXIMUM RATINGS*  
Supply Voltage ......................................................... +20V  
Input Voltage, Any Terminal.... VDD + 0.3V to GND – 0.3V  
Power Dissipation (TA 70°C)  
Plastic ...............................................................730mW  
CerDIP ..............................................................800mW  
SOIC .................................................................470mW  
Derating Factor  
Plastic ............................................................. 8mW/°C  
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V VDD 18V, unless otherwise specified.  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
Input  
VIH  
Logic 1, High Input Voltage  
Logic 0, Low Input Voltage  
Input Current  
2.4  
0.8  
1
V
VIL  
V
IIN  
0V VIN VDD  
–1  
µA  
Output  
VOH  
VOL  
High Output Voltage  
Low Output Voltage  
High Output Resistance  
Low Output Resistance  
Peak Output Current  
VDD – 0.025  
10  
6
0.025  
15  
V
V
A
ROH  
ROL  
IPK  
IOUT = 10 mA, VDD = 18V  
IOUT = 10 mA, VDD = 18V  
10  
1.5  
Switching Time (Note 1)  
tR  
Rise Time  
Test Figure 1/2  
Test Figure 1/2  
Test Figure 1/2  
Test Figure 1/2  
30  
30  
50  
75  
nsec  
nsec  
nsec  
nsec  
tF  
Fall Time  
tD1  
Delay Time  
Delay Time  
tD2  
Power Supply  
IS  
Power Supply Current  
VIN = 3V (Both Inputs)  
VIN = 0V (Both Inputs)  
8
0.4  
mA  
mA  
ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range with 4.5V VDD 18V, unless otherwise specified.  
Input  
VIH  
Logic 1, High Input Voltage  
Logic 0, Low Input Voltage  
Input Current  
2.4  
0.8  
10  
V
VIL  
V
IIN  
0V VIN VDD  
–10  
µA  
Output  
VOH  
VOL  
ROH  
ROL  
High Output Voltage  
Low Output Voltage  
VDD – 0.025  
13  
8
0.025  
20  
V
V
High Output Resistance  
Low Output Resistance  
IOUT = 10 mA, VDD = 18V  
IOUT = 10 mA, VDD = 18V  
15  
Switching Time (Note 1)  
tR  
Rise Time  
Test Figure 1/2  
Test Figure 1/2  
Test Figure 1/2  
Test Figure 1/2  
60  
30  
nsec  
nsec  
nsec  
nsec  
tF  
Fall Time  
tD1  
Delay Time  
Delay Time  
75  
tD2  
120  
Power Supply  
IS  
Power Supply Current  
VIN = 3V (Both Inputs)  
VIN = 0V (Both Inputs)  
12  
0.6  
mA  
mA  
NOTE: 1. Switching times guaranteed by design.  
4-170  
TELCOM SEMICONDUCTOR, INC.