BICMOS PWM CONTROLLERS
TC25C25
TC35C25
Operating Temperature
ABSOLUTE MAXIMUM RATINGS*
25C2x ........................................ – 40°C ≤ TA ≤ +85°C
35C2x ............................................. 0°C ≤ TA ≤ +70°C
Supply Voltage ............................................................18V
Maximum Chip Temperature................................... 150°C
Storage Temperature ............................ – 65°C to +150°C
Lead Temperature (10 sec)..................................... 300°C
Package Thermal Resistance
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
PDIP RθJ-A ..................................................................... 125°C/W
PDIP RθJ-C ........................................................................ 45°C/W
SOIC RθJ-A..................................................................... 250°C/W
SOIC RθJ-A........................................................................ 75°C/W
ELECTRICAL CHARACTERISTICS: Unless otherwise stated, these specifications apply for – 40°C < TA <
+85°C for the TC25C25Exx; and 0°C <TA < +70°C for the TC35C25Cxx;
VIN and VDD = 16V; RT = 3.7kΩ; CT = 1000pF; RD = 760Ω.
Parameter
Test Conditions
Min
Typ
Max
Units
Reference Section
Output Voltage
Line Regulation
Load Regulation
Temp Coefficient
VREF
TJ = 25°C, IO = 1mA
VIN = 8V to 18V
3.9
—
4
±4
4.1
±10
±15
±0.4
4.15
—
V
mV
II = 1mA to mA
—
±4
mV
Note 1
—
±0.01
4
mV/°C
V
Worst Case
3.85
—
Long Term Drift
Short Circuit
TJ = 25°C, (Note 1)
VREF to GND
±50
40
mV/1000Hrs
mA
20
—
70
Output Noise
TJ = 25°C, 10 Hz ≤ f ≥ 10 kHz, (Note 1)
21
—
µV(rms)
Oscillator Section
Initial Accuracy
TJ = 25°C, at 97 kHz
VIN = 8V to 18V
Note 1
—
—
±2
±3
±0.1
±0.06
3.4
%
%/V
%/°C
V
Voltage Coefficient
Temp Coefficient
OSC Ramp Amplitude
Reset Switch RDS (ON)
Clock Amplitude
±0.01
—
±
0.025
2.9
30
4.9
—
3.2
TJ = 25°C
50
60
Ω
fosc = 100kHz, RL = 1MΩ, (Note 1)
5.5
6.7
V
Clock Min Width
TJ = 25°C, RD = 0Ω, (Note 1)
CT = 100pF, RT = 1Ω
170
200
nsec
Sync Threshold
RT Pin Tied to VREF, CT Pin at GND
Sync Voltage = 4V, V(RT) = 4V
1.8
—
2.2
—
2.8
±1
V
Sync Input Current
Min Sync Pulse Width
Max OSC Freq
µA
TJ = 25°C, Sync Amplitude = 5V, (Note 1)
RT = 1Ω, CT = 100pF, RD = 0Ω, (Note 1)
—
130
—
175
—
nsec
MHz
1.0
Error Amplifier Section (VCM = 2.5V)
Input Offset Voltage
—
—
±5
±50
±25
85
±15
±200
±100
—
mV
pA
Input Bias Current
Input Offset Current
DC Open Loop Gain
Gain Bandwidth Product
Output Low Level
Output High Level
CMRR
TJ = 25°C
TJ = 25°C
—
pA
RL = 100kΩ
70
0.7
—
dB
Note 1
0.9
10
1.2
MHz
mV
V
RL = 100kΩ (N Channel)
RL = 100kΩ (NPN)
VCM = 0.5 to 4.7V
20
4.9
60
5.4
75
5.9
—
dB
4-112
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
