CMOS CURRENT MODE
PWM CONTROLLERS
TC18C46
TC28C46
TC38C46
ELECTRICAL CHARACTERISTICS (Cont): Unless otherwise stated, these specifications apply for
TA = –55°C to +125°C for TC18C46; – 40°C to +85°C for the TC28C46; and 0°C to +70°C for the TC38C46; VIN = VDD
16V; RT = 30.1k; CT = 270pF.
=
TC18C46
TC28C46
TC38C46
Typ Max
Parameter
Test Conditions
Min Typ
Max
Min
Units
Current Sense Section
Amplifier Gain
(Notes 2, 3)
2.7
1.1
3
3.6
1.8
2.7
1.1
3
3.4
1.8
V/V
V
Max Differential
(Note 2)
1.5
1.5
Input Signal (VPin 4-VPin 3
Input Offset Voltage
CMRR
)
(Note 2)
0.4
40
40
—
0.65
60
0.85
—
0.4
40
40
—
0.65
60
0.85
—
V
VCM = 1V to 12V, (Note 2)
VIN = 8V to 16V, (Note 2)
(Note 1)
dB
dB
nA
nA
V
PSRR
60
—
60
—
Input Bias Current
Input Offset Current
±1
±100
±2
±1
±100
±2
(Note 1)
—
±0.1
—
—
±0.1
—
Input Common Mode Range
Delay to Outputs
(Note 1)
0
11
0
11
Tf = 25°C, (Note 1)
150
225
400
150
225
400
nsec
Current Limit Adjust Section
Current Limit Voltage Offset
Input Impedance
—
±1
±25
—
4
±1
±25
mV
4
(Shutdown Unlatched)
3
3.5
3
3.5
kΩ
Shutdown Terminal Section
Threshold Voltage
320
0
360
—
400
VIN
—
320
0
360
—
400
VIN
—
mV
V
Input Voltage Range
(Note 1)
(Note 4)
Min Latching
140
—
140
—
µA
Current (IPin 1
Max Non-Latching
Current (IPin1
)
(Note 5)
—
—
60
—
—
65
µA
)
Min Pulse Width
Delay to Outputs
(Note 1)
(Note 1)
100
125
50
—
100
125
50
—
nsec
nsec
250
400
250
400
Output Section
Output Low Level rDS (ON)
Output High Level rDS (ON)
Output Rise Time
ISINK = 20mA
ISOURCE = 20mA
CL = 1 µF
—
—
—
—
10
20
55
55
20
35
90
90
—
—
—
—
10
20
55
55
20
35
90
90
Ω
Ω
nsec
nsec
Output Fall Time
CL = 1 µF
Undervoltage Lockout Section
Undervoltage Threshold
Start Threshold
6.5
7.4
0.6
7
7.3
8
6.5
7.4
0.6
7
7.3
8
V
V
V
7.8
0.8
7.8
0.8
Threshold Hysteresis
Total Standby Current
Supply Current
1
1
—
—
1.2
2.5
—
—
1.2
2
mA
Start-Up Current
250
350
250
350
µA
∆VPin 7
∆VPin 4
NOTES: 1. These parameters, although guaranteed over the
recommended operating conditions, are not tested in
production.
G =
;∆VPin 4 = 0V to 1V
4. Current into Pin 1 guaranteed to latch circuit in shutdown
2. Parameter measured at trip point of latch with VPin 6
VREF, VPin 16 = 0V.
=
state.
5. Current into Pin 1 guaranteed not to latch circuit in
shutdown state.
3. Amplifier gain is defined as:
4-104
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
