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TC1427 参数 Datasheet PDF下载

TC1427图片预览
型号: TC1427
PDF下载: 下载PDF文件 查看货源
内容描述: 1.2A双路高速MOSFET驱动器 [1.2A DUAL HIGH-SPEED MOSFET DRIVERS]
分类和应用: 驱动器
文件页数/大小: 6 页 / 83 K
品牌: TELCOM [ TELCOM SEMICONDUCTOR, INC ]
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1.2A DUAL HIGH-SPEED MOSFET DRIVERS  
TC1426  
TC1427  
TC1428  
ABSOLUTE MAXIMUM RATINGS*  
Power Dissipation (TA 70°C)  
Maximum Chip Temperature................................. +150°C  
Storage Temperature .............................+65°C to +150°C  
Lead Temperature (Soldering ,10 sec) ................. +300°C  
Plastic DIP ...........................................................730W  
SOIC ................................................................470 mW  
Derating Factor  
Plastic DIP ..................................................... 8 mW/°C  
SOIC .............................................................. 4 mW/°C  
Supply Voltage ............................................................18V  
Input Voltage, Any Terminal..(VDD + 0.3V) to (GND – 0.3V)  
Operating Temperature: C Version.............. 0°C to +70°C  
E Version ......... – 40°C to +85°C  
*Stresses above those listed under "Absolute Maximum Ratings" may  
causepermanentdamagetothedevice. Thesearestressratingsonly, and  
functional operation of the device at these or any other conditions above  
those indicated in the operational sections of the specifications is not  
implied. Exposure to absolute maximum rating conditions for extended  
periods may affect device reliability.  
ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V VDD+ 16V unless otherwise specified.  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
Input  
VIH  
Logic 1, Input Voltage  
Logic 0, Input Voltage  
0V VIN VDD  
3
0.8  
1
V
V
VIL  
IIN  
Input Current  
– 1  
µA  
Output  
VOH  
High Output Voltage  
Low Output Voltage  
Output Resistance  
Test Figures 1 and 2  
Test Figures 1 and 2  
VDD – 0.025  
12  
0.025  
18  
V
V
VOL  
RO  
VIN = 0.8V,  
IOUT = 10 mA, VDD = 16V  
VIN = 3V,  
8
12  
IOUT = 10 mA, VDD = 16V  
IPK  
I
Peak Output Current  
Latch-Up Current  
1.2  
A
Withstand Reverse Current  
> 500  
mA  
Switching Time (Note 1)  
tR  
Rise Time  
Fall Time  
Test Figures 1 and 2  
Test Figures 1 and 2  
Test Figures 1 and 2  
Test Figures 1 and 2  
35  
25  
75  
75  
nsec  
nsec  
nsec  
nsec  
tF  
tD1  
Delay Time  
Delay Time  
tD2  
Power Supply  
IS  
Power Supply Current  
VIN = 3V (Both Inputs)  
VIN = 0V (Both Inputs)  
9
0.5  
mA  
Note: 1. Switching times guaranteed by design.  
4-208  
TELCOM SEMICONDUCTOR, INC.