2A HIGH-SPEED MOSFET DRIVERS
TC1412
TC1412N
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
Power Dissipation (TA ≤ 70°C)
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B. (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmay
affect device reliability.
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 16V, unless other-
wise specified. Typical values are measured at TA = 25°C; VDD = 16V.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.0
—
—
—
—
V
VIL
0.8
V
IIN
–5V ≤ VIN ≤ VDD
TA = 25°C
– 40°C ≤ TA ≤ 85°C
– 1
– 10
—
—
1
10
µA
Output
VOH
High Output Voltage
Low Output Voltage
Output Resistance
DC Test
DC Test
VDD – 0.025
—
—
—
—
V
V
Ω
VOL
0.025
RO
VDD = 16V, IO = 10mA TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
4
5
5
6
7
7
IPK
Peak Output Current
VDD = 16V
—
2.0
—
—
—
A
A
IREV
Latch-Up Protection
Withstand Reverse Current
Duty Cycle ≤ 2%
t ≤ 300 µsec
0.5
V
DD = 16V
Switching Time (Note 1)
tR
Rise Time
Figure 1
Figure 1
Figure 1
Figure 1
TA = 25°C
0°C ≤ TA ≤70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
18
20
22
26
31
31
nsec
nsec
nsec
nsec
tF
Fall Time
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
18
20
22
26
31
31
tD1
Delay Time
Delay Time
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
35
40
40
45
50
50
tD2
TA = 25°C
0°C ≤ TA ≤ 70°C
– 40°C ≤ TA ≤ 85°C
—
—
—
35
40
40
45
50
50
Power Supply
IS
Power Supply Current
VIN = 3V
VIN = 0V
—
—
0.5
0.1
1.0
0.15
mA
VDD = 16V
NOTE: 1. Switching times are guaranteed by design.
4-196
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
