300mA CMOS LDO With Shutdown,
ERROR Output, And Bypass
TC1173
Storage Temperature ............................ – 65°C to +150°C
Maximum Voltage on Any Pin ............ VIN +0.3V to – 0.3V
Lead Temperature (Soldering, 10 Sec.)................ +300°C
ABSOLUTE MAXIMUM RATINGS*
Input Voltage ..............................................................6.5V
Output Voltage ........................... (VSS – 0.3) to (VIN + 0.3)
Power Dissipation ....................Internally Limited (Note 7)
Operating Temperature.................... – 40°C < TJ < 125°C
*Absolute Maximum Ratings indicate device operation limits beyond dam-
age may occur. Device operation beyond the limits listed in Electrical
Characteristics is not recommended.
ELECTRICAL CHARACTERISTICS: VIN = VOUT + 1V, IL = 0.1µA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted.
BOLDFACE type specifications apply for junction temperatures of – 40°C to +125°C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
VIN
Input Operating Voltage
Maximum Output Current
Output Voltage
—
—
—
6.0
V
mA
V
IOUT
300
—
MAX
VOUT
Note 1
Note 2
—
VR ± 0.5%
—
VR - 2.5%
VR + 2.5%
∆VOUT/∆T
VOUT Temperature Coefficient
—
—
—
ppm/°C
40
∆VOUT/∆VIN
∆VOUT/VOUT
VIN – VOUT
Line Regulation
(VR + 1V) < VIN < 6V
—
—
—
0.05
0.5
0.35
2.0
%
%
Load Regulation
IL = 0.1mA to IOUTMAX (Note 3)
Dropout Voltage (Note 4)
IL = 0.1mA
IL = 100mA
IL = 300mA
20
80
240
30
160
480
mV
ISS1
Supply Current
SHDN = VIH
SHDN = 0V
—
—
—
—
—
—
50
0.05
60
90
0.5
—
µA
µA
ISS2
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
PSRR
F
RE ≤ 1kHz
dB
IOUT
VOUT = 0V
550
0.04
260
650
—
mA
SC
∆VOUT∆PD
Note 5
V/W
nV/√Hz
eN
Output Noise
F = 1kHz, COUT = 1µF,
—
RLOAD = 50Ω
SHDN Input
VIH
VIL
SHDN Input High Threshold
SHDN Input Low Threshold
45
—
—
—
%VIN
%VIN
—
15
ERROR Output
VMIN
VOL
VTH
VOL
Minimum Operating Voltage
1.0
—
—
—
—
—
—
400
—
V
mV
V
Output Logic Low Voltage
ERROR Threshold Voltage
ERROR Positive Hysteresis
1mA Flows to ERROR
Note 7
0.95 x VR
50
—
mV
NOTES: 1. VR is the user-programmed regulator output voltage setting.
MIN) x 10 6
2. TC VOUT = (VOUT
V
OUT
–
MAX
∆T
x
VOUT
3. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1mA
to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
4. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V differential.
5. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10msec.
6. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature, and the
thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Thermal Considerations section of this data sheet for more details.
7. Hysteresis voltage is referenced to VR.
TC1173-2 2/2/00
2
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
