PRELIMINARY INFORMATION
100mA CMOS LDO WITH SHUTDOWN,
ERROR OUTPUT AND VREF BYPASS
TC1073
*Stresses beyond those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .................................................................7V
Output Voltage .................................. (– 0.3) to (VIN + 0.3)
Power Dissipation ....................Internally Limited (Note 7)
Operating Temperature .................... – 40°C < TJ < 125°C
Storage Temperature ............................– 65°C to +150°C
Maximum Voltage On Any Pin .......... VIN + 0.3V to – 0.3V
ELECTRICAL CHARACTERISTICS: VIN = VOUT + 1V, IL = 0.1mA, CL = 3.3µF, SHDN > VIH, TA = 25
°C, unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
VIN
Input Operating Voltage
Maximum Output Current
Output Voltage
Note 9
—
100
—
—
6.5
V
mA
IOUT
Note 9
—
MAX
VOUT
Notes 1, 9
Note 2, 9
VR – 2.5%
V
R ±0.5% VR + 2.5%
V
TC VOUT
VOUT Temperature Coefficient
20
—
ppm/°C
40
∆VOUT/∆VIN
∆VOUT/VOUT
Line Regulation
Load Regulation
(VR + 1V) < VIN < 6V
—
—
0.05
0.5
—
—
%
%
IL = 0.1mA to IOUT
(Note 3)
MAX
VIN – VOUT
Dropout Voltage (Note 4)
IL = 0.1mA
IL = 20mA
IL = 50mA
IL =100mA
(Note 4)
—
20
70
100
200
—
mV
IGND
IIN
Ground Pin Current
IL = IOUT
—
0
—
80
0.05
—
µA
µA
MAX, (Note 5, 9)
Supply Current
SHDN = VIH, IL = 0
SHDN = 0V
—
50
—
IINSD
ROUT
PSRR
Shutdown Supply Current
Output Resistance during Shutdown
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
—
µA
SHDN < VIL
100 x VR
160 x VR
64
kΩ
FRE ≤ 1kHz
—
—
—
—
—
—
—
dB
IOUT
VOUT = 0V
Note 6
300
500
—
mA
%/W
°C
SC
∆VOUT/∆PD
TSD
0.04
160
Thermal Shutdown Die Temperature
Thermal Shutdown Hysteresis
Output Noise
—
∆TSD
10
—
°C
eN
IL = IOUT
260
—
nV/√Hz
MAX
470pF from Bypass to GND
SHDN Input
VIH
VIL
SHDN Input High Threshold
SHDN Input Low Threshold
VIN = 2.5V to 6.5V
VIN = 2.5V to 6.5V
45
—
—
—
—
%VIN
%VIN
15
2
TC1073-01 6/5/97
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
