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TC1014-3.0VCT 参数 Datasheet PDF下载

TC1014-3.0VCT图片预览
型号: TC1014-3.0VCT
PDF下载: 下载PDF文件 查看货源
内容描述: 具有关断功能和基准旁路50毫安CMOS LDO [50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS]
分类和应用:
文件页数/大小: 10 页 / 111 K
品牌: TELCOM [ TELCOM SEMICONDUCTOR, INC ]
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PRELIMINARY INFORMATION  
100mA CMOS LDO WITH SHUTDOWN  
AND REFERENCE BYPASS  
TC1015  
*Stresses beyond those listed under "Absolute Maximum Ratings" may  
cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond  
those indicated in the operational sections of the specifications is not  
implied. Exposure to absolute maximum rating conditions for extended  
periods may affect device reliability.  
ABSOLUTE MAXIMUM RATINGS*  
Input Voltage .................................................................7V  
Output Voltage .................................. (– 0.3) to (VIN + 0.3)  
Power Dissipation ....................Internally Limited (Note 7)  
Operating Temperature .................... – 40°C < TJ < 125°C  
Storage Temperature ............................65°C to +150°C  
Maximum Voltage On Any Pin .......... VIN + 0.3V to – 0.3V  
ELECTRICAL CHARACTERISTICS: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25  
°C, unless otherwise noted.  
Boldface type specifications apply for junction temperatures of – 40°C to +125°C.  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
VIN  
Input Operating Voltage  
Maximum Output Current  
Output Voltage  
100  
6.5  
V
mA  
IOUT  
MAX  
VOUT  
Note 1  
Note 2  
VR – 2.5%  
V
R ±0.5% VR + 2.5%  
V
TCVOUT  
VOUT Temperature Coefficient  
20  
ppm/°C  
40  
VOUT/VIN  
VOUT/VOUT  
Line Regulation  
Load Regulation  
(VR + 1V) < VIN < 6V  
0.01  
0.5  
%
%
IL = 1.0mA to IOUT  
(Note 3)  
MAX  
VIN – VOUT  
Dropout Voltage (Note 4)  
IL = 0.1mA  
IL = 20mA  
IL = 50mA  
IL =100mA  
(Note 4)  
20  
70  
93  
mV  
112  
IGND  
IIN  
Ground Pin Current  
IL = IOUT  
50  
0
µA  
µA  
MAX, (Note 5)  
Supply Current  
SHDN = VIH, IL = 0  
SHDN = 0V  
IINSD  
PSRR  
Shutdown Supply Current  
Power Supply Rejection Ratio  
Output Short Circuit Current  
Thermal Regulation  
Output Noise  
0.05  
µA  
FRE 1kHz  
64  
dB  
IOUT  
VOUT = 0V  
Note 6  
300  
0.04  
260  
500  
mA  
SC  
VOUT/PD  
%/W  
nV/Hz  
eN  
IL = IOUT  
MAX  
470pF from Bypass to GND  
SHDN Input  
VIH  
VIL  
SHDN Input High Threshold  
SHDN Input Low Threshold  
VIN = 2.5V to 6.5V  
VIN = 2.5V to 6.5V  
45  
%VIN  
%VIN  
15  
NOTES: 1. VR is the regulator output voltage setting. VR = 2.5V, 2.7V, 3.0V, 3.3V, 5.0V.  
MIN) x 10 6  
2. TCVOUT = (VOUT  
VOUT  
MAX  
T  
x
VOUT  
3. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load  
range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the  
thermal regulation specification.  
4. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V  
differential.  
5. Ground pin current is the regulator pass transistor gate current. The total current drawn from the input supply is the sum of the load  
current, ground current and supply current (i.e. IIN = ISUPPLY + IGND + ILOAD).  
6. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load  
or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10msec.  
7. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the  
thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to  
initiate thermal shutdown. Please see Thermal Considerations section of this data sheet for more details.  
.
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TC1015-01-6/5/97