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LM285B-1.2V 参数 Datasheet PDF下载

LM285B-1.2V图片预览
型号: LM285B-1.2V
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗,带隙电压参考 [LOW POWER, BANDGAP VOLTAGE REFERENCES]
分类和应用:
文件页数/大小: 4 页 / 57 K
品牌: TELCOM [ TELCOM SEMICONDUCTOR, INC ]
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LOW POWER, BANDGAP  
VOLTAGE REFERENCES  
LM285/285B-1.2V  
LM285/285B-2.5V  
LM385/385B-1.2V  
LM385/385B-2.5V  
ABSOLUTE MAXIMUM RATINGS*  
Lead Temperature (Soldering, 10 sec)  
TO-92 Package .............................................. +300°C  
Surface Mount Package ................................. +300°C  
Power Dissipation  
Limited by Forward/Reverse Current  
*Functional operation above the absolute maximum stress ratings is not  
implied.  
Forward Current .................................................... +10mA  
Reverse Current.................................................... +30mA  
Storage Temperature Range ................ – 65°C to +150°C  
Operating Temperature Range  
TO-92 Package ................................ – 40°C to +85°C  
Surface Mount Package ................... – 40°C to +85°C  
ELECTRICAL CHARACTERISTICS: TA = +25°C, unless otherwise specified.  
LM285 / LM285B–1.2  
LM385 / LM385B–1.2  
Symbol Parameter  
Test Conditions  
Min  
Typ Max  
Min  
Typ Max  
Unit  
V(BR)R  
Reverse Breakdown Voltage  
I
R 20mA  
V
LM285B-1.2/LM385B-1.2  
TA = Tlow to Thigh (Note 1)  
LM285-1.2V/LM385-1.2V  
TA = Tlow to Thigh (Note 1)  
1.223  
1.200  
1.205  
1.192  
1.235 1.247  
1.223  
1.210  
1.205  
1.192  
1.235 1.247  
1.270  
1.260  
1.235 1.260  
1.235 1.260  
1.273  
1.273  
IRMIN  
Minimum Operating Current  
TA = +25°C  
TA = Tlow to Thigh (Note 1)  
µA  
8.0  
15  
20  
8.0  
15  
20  
V(BR)R  
Reverse Breakdown Voltage  
Change with Current  
mV  
IRmin = IR = 1.0mA, TA = +25°C  
TA = Tlow to Thigh (Note 1)  
1.0mA = IR = 20mA, TA = +25°C  
TA = Tlow to Thigh (Note 1)  
1.0  
1.5  
10  
1.0  
1.5  
20  
20  
25  
Z
Reverse Dynamic Impedance  
IR = 100µA  
0.6  
30  
20  
100  
0.6  
30  
20  
100  
V(BR)/T Average Temperature Coefficient 10µA IR 20mA  
ppm/°C  
ppm/kHR  
S
Long Term Stability  
IR = 100µA,  
TA = +25°C ±0.1°C  
LM285 / LM285B–2.5  
LM385 / LM385B–2.5  
Symbol Parameter  
Test Conditions  
Min  
Typ Max  
Min  
Typ Max  
Unit  
V(BR)R  
Reverse Breakdown Voltage  
IR = 20mA  
V
LM285B-2.5/LM385B-2.5  
TA = Tlow to Thigh (Note 1)  
LM285-2.5V/LM385-2.5V  
TA = Tlow to Thigh (Note 1)  
2.462  
2.415  
2.425  
2.400  
2.5  
2.5  
2.538  
2.585  
2.575  
2.600  
2.462  
2.436  
2.425  
2.400  
2.5  
2.5  
2.538  
2.564  
2.575  
2.600  
IRMIN  
Minimum Operating Current  
TA = +25°C  
TA = Tlow to Thigh (Note 1)  
µA  
13  
20  
30  
13  
20  
30  
V(BR)R  
Reverse Breakdown Voltage  
Change with Current  
mV  
IRmin = IR = 1.0mA, TA = +25°C  
TA = Tlow to Thigh (Note 1)  
1.0mA = IR = 20mA, TA = +25°C  
TA = Tlow to Thigh (Note 1)  
1.0  
1.5  
10  
2.0  
2.5  
20  
20  
25  
Z
Reverse Dynamic Impedance  
IR = 100µA  
0.6  
30  
20  
100  
0.6  
30  
20  
100  
V(BR)/T Average Temperature Coefficient 20µA IR 20mA  
ppm/°C  
ppm/kHR  
S
Long Term Stability  
IR = 100µA,  
TA = +25°C ±0.1°C  
Note: 1. Tlow = – 40°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5  
0°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5  
Thigh = +85°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5  
+70°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5  
3-10  
TELCOM SEMICONDUCTOR, INC.