NPN Small Signal General Purpose Transistors
2N5089
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
V (BR)CEO
V (BR) CBO
ICBO
Description
MIN
25
MAX
--
Unit Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V
V
Open Emitter
30
--
Open Base
--
50
IE = 0; VCB =20V
IC = 0; VEB = 4.5 V
IC = 100 µA; VCE = 5 V
IC = 1 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
IC = 10 mA; IB =1mA
IC = 10 mA; VCE =5V
nA
nA
--
100
1200
--
IEBO
400
450
400
--
DC Current Gain
hFE
--
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.5
0.8
VCE(sat)
VBE(on)
V
V
IC = 500 µA; VCE = 5 V;
f = 20 MHz
transition frequency
50
--
--
4.0
10
MHz
pF
fT
Collector-Base Capacitance
Emmiter-Base Capacitance
Small-Signal Current Gain
Noise Figure
IE= 0; VCB =5V; f=100KHz
IC= 0; VCB =5V; f=100KHz
Cc
Ce
hfe
NF
--
pF
IC = 1.0 mA, VCE = 5 V,
f = 1.0 kHz
450
--
1800
2.0
IC = 100 µA, VCE = 5.0 V,
RS=10 kΩ, f=10 Hz to 15.7 Hz
dB
Rev. A/WW
Rev. A/WW
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