Small Signal General Purpose Transistors (NPN)
2N4400/2N4401
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
2N4400
2N4401
Symbol
Description
Unit
Conditions
Min. Max. Min. Max.
60
40
6.0
-
-
-
60
40
6.0
-
-
-
V
V
V
IC=100µA, IE=0
IC=1mA, IB=0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CBO
V(BR)CEO*
V(BR)EBO
-
-
IE=100µA, IC=0
0.40
0.75
0.95
1.20
100
100
-
0.40
0.75
0.95
1.20
100
100
-
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VEB=0.4V, VCE=35V
VEB=0.4V, VCE=35V
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
V
V
VCE(sat) *
VBE(sat) *
-
-
0.75
-
0.75
-
Collector Cut–Off Current
Base Cut–Off Current
-
-
nA
nA
ICEV
IBEV
-
-
-
20
40
80
100
40
20
40
50
20
-
-
D.C. Current Gain
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
hFE*
-
-
150
-
300
-
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=20mA,
f=100MHz
VCB=5V, IE=0
f=100KHz,
VEB=0.5V, IC=0
f=100KHz,
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=1mA
f=1KHz,
0.5
0.1
200
-
7.5
8.0
-
1.0
0.1
250
-
15
8.0
-
kΩ
MHz
pF
Input Impedance
hie
hre
Voltage Feedback Ratio
Current Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Small Signal Current Gain
Output Admittance
fT
6.5
30
250
30
6.5
30
500
30
CCBO
CEBO
hfe
-
-
pF
20
1.0
40
1.0
μS
hoe
-
-
-
-
15
20
-
-
-
-
15
20
nS
nS
nS
nS
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
VCC=30V, VEB=2V
IC=150mA, IB1=15mA
225
30
225
30
VCC=30V, IC=150mA
IB1=IB2=15mA
*Pulse Test: Pulse Width<300µs, Duty Cycle<2%
Rev. A/AH 2008-03-05
Page 2 of 4
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