Electrical Characteristics* T =25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min.
Max.
Units
VR
Breakdown Voltage
IR = 100µA
IR = 5.0µA
100
75
V
V
VF
Forward Voltage
1N914B/4448 IF = 5.0mA
1N916B IF = 5.0mA
1N914/916/4148 IF = 10mA
1N914A/916A IF = 20mA
1N916B IF = 20mA
620
630
720
730
1.0
1.0
1.0
1.0
mV
mV
V
V
V
1N914B/4448 IF = 100mA
V
IR
Reverse Leakage
VR = 20V
VR = 20V, TA = 150°C
VR = 75V
25
50
5.0
nA
µA
µA
CT
Total Capacitance
1N916A/B/4448
1N914A/B/4148
VR = 0, f = 1.0MHz
VR = 0, f = 1.0MHz
2.0
4.0
pF
pF
trr
Reverse Recovery Time
IF = 10mA, VR = 6.0V (600mA)
4.0
ns
Irr = 1.0mA, RL = 100Ω
* Non-recurrent square wave PW = 8.3ms
Typical Characteristics
120
160
Ta=25 o
C
Ta= 25 oC
100
80
60
40
20
0
150
140
130
120
110
1
2
3
5
10
20
30
50
100
10
20
30
70
100
Reverse Voltage, VR [5V0]
Reverse Current, IR [uA]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs Reverse Current
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100V
BV - 1.0 to 100µA
750
550
Ta= 25 o
C
Ta= 25 o
C
700
650
600
550
500
450
500
450
400
350
300
250
0.1
0.2 0.3
0.5
1
2
3
5
10
1
2
3
5
10
20
30
50
100
Forward Current, IF [uA]
Forward Current, IF [mA]
Figure 3. Forward Voltage vs Forward Current
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10mA
VF - 1 to 100µA
2
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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2
TAITRON [ TAITRON COMPONENTS INCORPORATED ]
