THN5601SF
□ THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITION
Ts=70℃;note1
VALUE
250
Unit
thermal resistance from junction
to soldering point
K/W
Rth j-s
* Note 1. Ts is temperature at the soldering point of the collector pin.
□ QUICK REFERENCE DATA
Mode of Operation
f [MHz]
VCE [V]
PL [dBm]
GP [dB]
ηC [%]
CW, class-AB
900
4.8(Icq=5mA)
26
≥ 8.0
≥ 50
□ DC CHARACTERISTICS
Tj=25 ℃ unless otherwise specified
SYMBOL
PARAMETER
collector-base breakdown voltage
CONDITION
MIN.
MAX. UNIT
open emitte
open base
BVCBO
BVCEO
BVEBO
IS
20
8
V
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
V
open collector
2.5
10
60
7
V
uA
hFE
200
Vce=4.8V, Icc=200mA, f=500MHz
Vcb=10V, f=1MHz
transition frequency
fT
GHz
collector capacitance
CCB
3
pF
Sep-2003
Rev 1.1
www.tachyonics.co.kr
-2/11-
TI [ TEXAS INSTRUMENTS ]
