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THN4201E 参数 Datasheet PDF下载

THN4201E图片预览
型号: THN4201E
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管 [NPN SiGe RF TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 12 页 / 228 K
品牌: TI [ TEXAS INSTRUMENTS ]
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THN4201 Series  
Electrical Characteristics ( TA = 25 )  
Value  
Symbol  
Parameter  
Test Condition  
CB = 10 V, IE = 0 mA  
VCE = 6 V, IB = 0 mA  
EB = 1 V, IC = 0 mA  
VCE = 3 V, IC = 15 mA  
Unit  
Min.  
Typ. Max.  
ICBO  
ICEO  
IEBO  
hFE  
fT  
V
-
-
-
-
0.5  
5
uA  
uA  
uA  
Collector Cut-off Current  
V
Emitter Cut-off Current  
DC Current Gain  
-
-
0.5  
300  
-
80  
-
200  
16.5  
0.48  
V
V
CE = 3 V, IC = 20 mA  
CB = 10 V, f = 1 MHz  
Transition Frequency  
Collector to Base Capacitance  
GHz  
pF  
CCB  
-
-
VCE = 3 V, IC = 15 mA, f = 2 GHz  
VCE = 1 V, IC = 10 mA, f = 2 GHz  
VCE = 3 V, IC = 15 mA, f = 2 GHz  
VCE = 1 V, IC = 10 mA, f = 2 GHz  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
VCE = 1 V, IC = 3 mA, f = 2 GHz  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
VCE = 1 V, IC = 3 mA, f = 2 GHz  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
VCE = 1 V, IC = 3 mA, f = 2 GHz  
7.5  
8.4  
7.5  
10.3  
9.5  
1.5  
1.7  
0.04  
0.05  
8
-
-
-
-
-
-
-
-
-
-
|S21|2  
Insertion Power Gain  
dB  
dB  
dB  
6
8.5  
MAG Maximum Available Gain  
NFmin Minimum Noise Figure  
8
-
-
-
-
-
-
rn  
Noise Resistance  
Associated Gain  
GA  
dB  
7
March-2006  
Rev 1.0  
www.tachyonics.co.kr  
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