欢迎访问ic37.com |
会员登录 免费注册
发布采购

TBN6301U 参数 Datasheet PDF下载

TBN6301U图片预览
型号: TBN6301U
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管RF [NPN SILICON RF TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 224 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号TBN6301U的Datasheet PDF文件第1页浏览型号TBN6301U的Datasheet PDF文件第2页浏览型号TBN6301U的Datasheet PDF文件第3页浏览型号TBN6301U的Datasheet PDF文件第5页浏览型号TBN6301U的Datasheet PDF文件第6页  
Preliminary Specification  
TBN6301 series  
Base Current, Collector Current  
Collector Current  
vs. Base to Emitter Voltage  
vs. Collector to Emitter Voltage  
70  
60  
50  
40  
30  
20  
10  
0
100  
10-1  
10-2  
10-3  
10-4  
10-5  
10-6  
10-7  
10-8  
10-9  
IB Step = 50 µA  
VCE = 3 V  
0
1
2
3
4
5
6
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
Collector to Emitter Voltage, VCE (V)  
Base to Emitter Voltage, VBE (V)  
Gain Bandwidth Product  
vs. Collector Current  
Insertion Power Gain  
vs. Frequency  
30  
25  
20  
15  
10  
5
14  
12  
10  
8
VCE = 3 V  
VCE = 5 V  
VCE = 7 V  
VCE = 3 V  
IC = 10 mA  
6
4
2
0
0.1  
0
1
1
10  
100  
Frequency (GHz)  
Collector Current, IC (mA)  
http://www.tachyonics.co.kr  
March. 2005.  
Rev. 1.0  
Page 4 of 6