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TBN6301E 参数 Datasheet PDF下载

TBN6301E图片预览
型号: TBN6301E
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管RF [NPN SILICON RF TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 224 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号TBN6301E的Datasheet PDF文件第1页浏览型号TBN6301E的Datasheet PDF文件第3页浏览型号TBN6301E的Datasheet PDF文件第4页浏览型号TBN6301E的Datasheet PDF文件第5页浏览型号TBN6301E的Datasheet PDF文件第6页  
Preliminary Specification  
TBN6301 series  
Electrical Characteristics (TA = 25 )  
Parameter  
Symbol  
ICBO  
ICEO  
IEBO  
hFE  
Test Conditions  
VCB = 15 V, IE = 0 mA  
VCE = 8 V, IB = 0 mA  
VEB = 2 V, IC = 0 mA  
VCE = 3 V, IC = 10 mA  
Min.  
Typ.  
Max.  
0.5  
Unit  
Collector Cut-off Current  
10  
Emitter Cut-off Current  
DC Current Gain  
0.5  
50  
5
250  
Gain Bandwidth Product  
fT  
V
CE = 3 V, IC = 10 mA  
CE = 5 V, IC = 20 mA  
6
7.5  
9
GHz  
GHz  
dB  
V
6
Insertion Power Gain  
|S21|2  
VCE = 3 V, IC = 10 mA, f = 1 GHz  
VCE = 5 V, IC = 20 mA, f = 1 GHz  
VCE = 3 V, IC = 10 mA, f = 1 GHz  
VCB = 3 V, IE = 0 mA, f = 1 MHz  
7
7
9.5  
1.4  
1.1  
dB  
Noise Figure  
NF  
Cre  
1.8  
Reverse Transfer Capacitance  
pF  
hFE Classification  
Marking  
SB2  
SB1  
hFE Value  
50 - 160  
125 - 250  
Available Package  
Unit in mm  
Product  
TBN6301S  
TBN6301U  
TBN6301E  
TBN6301KF  
Package  
SOT23  
Dimension  
2.9 1.3, 1.2t  
2.0 1.25, 1.0t  
1.6 0.8, 0.8t  
1.4 0.8, 0.6t  
SOT323  
SOT523  
SOT623F  
http://www.tachyonics.co.kr  
Dec. 2005.  
Rev. 1.0  
Page 2 of 6