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HV311LG 参数 Datasheet PDF下载

HV311LG图片预览
型号: HV311LG
PDF下载: 下载PDF文件 查看货源
内容描述: 热插拔,控制器,断路器 [Hotswap, Controllers with Circuit Breaker]
分类和应用: 断路器控制器
文件页数/大小: 21 页 / 662 K
品牌: SUPERTEX [ Supertex, Inc ]
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HV301/HV311  
10V  
Design Information, cont’d.  
C
2
48V  
10µA  
0.75nF  
Cload  
Undervoltage/Overvoltage Operation  
1
: 2  
mirror  
10µA  
GND  
RAMP  
terminal  
GATE  
Termial  
Isink  
V
SENSE  
UV  
OFF  
UV  
ON  
Vsense  
Rsense  
10n=Cramp  
VIN  
5k  
Internal Circuitry  
OV  
OV  
ON  
OFF  
ON  
OFF  
Pass  
Transistor  
1. Choose circuit breaker trip point eg. 8A as follows  
100mV 100mV  
Rsense =  
=
= 12.5mΩ  
From the calculated resistor values the OV and UV start up  
threshold voltages can be calculated as follows:  
ICB  
8
2. Choose inrush level, for example Inrush=1A  
Inrush*Rsense 1A ×12.5mΩ  
R2 + R3  
R1 + R2 + R3  
UVON = VUVH = 1.26 = VEEUV(on)  
OVON = VOVL = 1.16 = VEEOV(on)  
×
×
3. Calculate Isink =  
=
= 2.5µA  
5kΩ  
4. Calculate C2 discharge limit  
= 10µA-Isink = 7.5µA (typical)=iC2  
5kΩ  
R3  
R1 + R2 + R3  
Where |VEEUV(on)| and |VEEOV(on)| are Under & Over Voltage Start  
Up Threshold points relative to VEE.  
4a. Adjust for Auto-retry disable, if used →  
Max Vt of a typical  
power FET  
Then  
Vtmax  
4V  
2.5MΩ  
e.g.  
= 1.6µA  
Rdisable  
R1 + R2 + R3  
R2 + R3  
VEEUV(on) = 1.26 ×  
e.g. iC2 =10µA-Isink -1.6µA  
487k+ 6.81k+ 9.76kΩ  
In this example we assume Auto-retry is enabled so  
VEEUV(on) = 1.26 ×  
And  
= 38.29V  
= 59.85V  
6.81k+ 9.76kΩ  
ignore 1.6µA, iC2 = 10µA-Isink = 7.5µA  
dv  
dt  
dv  
dt  
dv  
dt  
5. Note: i= C  
iC2 = C2 ×  
Inrush= Cload ×  
R1 + R2 + R3  
VEEOV(on) = 1.16 ×  
R3  
Note VIN is fixed and VRAMP is constant during limiting  
487k+ 6.81k+ 9.76kΩ  
9.76kΩ  
dv  
dt  
dv  
dt  
VEEOV(on) = 1.16 ×  
across Cload  
=
across C2 (as they share a  
common node and their other terminals are fixed during inrush)  
Therefore, the circuit will start when the input supply voltage is  
in the range of 38.29V to 59.85V.  
iC2 Inrush  
iC2 × Cload  
=
Inrush=  
C2  
Cload  
C2  
by conservation of charge on RAMP Node iC2 = 7.5µA  
Programming Inrush and ICB (Circuit Breaker)  
7.5µA × Cload  
7.5µA × Cload  
Inrush=  
C2 =  
C2  
Inrush  
Method 1: Inrush independent of ICB  
7.5µA ×100nF  
10V  
Vin  
=
= 750pF = 0.75nF  
C
2
+
1A  
+
7.5µA  
10µA  
Cload=100µF  
inrush  
Cgd  
7.5µA  
Note that RAMP is protected by AC divider and Gate  
is clamped internally.  
GATE  
0µA  
RAMP  
(DRAIN)  
Cdb  
+ K –  
2.5µA  
0µA  
VSENSE  
+
Vgs  
gm(Vgs-Vt)  
10n  
Cgs  
VSENSE  
5k  
Rsense=12.5mΩ  
dv  
df  
on Cramp constant  
during limiting so no  
current flowing into cap  
6