HV301/HV311
Electrical Characteristics (-10V ≤ VEE ≤ -90V, -40°C ≤ +85°C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
Conditions
Supply (Referenced to VDD pin)
VEE
IEE
IEE
Supply Voltage
Supply Current
Sleep Mode Suppy Current
-90
-10
700
450
V
µA
µA
600
400
VEE = -48V, Mode = Limiting
VEE = -48V, Mode = Sleep
OV and UV Control (Referenced to VEE pin)
VUVH
VUVL
VUVHY
IUV
VOVH
VOVL
VOVHY
IOV
UV High Threshold
UV Low Threshold
UV Hysteresis
UV Input Current
OV High Threshold
OV Low Threshold
OV Hysteresis
1.26
1.16
100
V
V
mV
nA
V
V
mV
nA
Low to High Transition
High to Low Transition
1.0
1.0
VUV = VEE +1.9V
Low to High Transition
High to Low Transition
1.26
1.16
100
OV Input Current
VOV = VEE + 0.5V
Current Limit (Referenced to VEE pin)
Current Limit Threshold Voltage
VSENSE-CB Circuit Breaker Threshold Voltage
VSENSE-CL
40
80
50
100
60
120
mV
mV
VUV = VEE + 1.9V, VOV = VEE + 0.5V
VUV = VEE + 1.9V, VOV = VEE + 0.5V
Gate Drive Output (Referenced to VEE pin)
VGATE
Maximum Gate Drive Voltage
8.5
500
10
12
V
µA
VUV = VEE + 1.9V, VOV = VEE + 0.5V
VUV = VEE + 1.9V, VOV = VEE + 0.5V
IGATEUP
Gate Drive Pull-Up Current
IGATEDOWN Gate Drive Pull-Down Current
40
mA
VUV = VEE, VOV = VEE + 0.5V
Ramp Timing Control (Test Conditions: CLOAD=100µF, CRAMP=10nF, VUV=VEE+1.9V, VOV=VEE+0.5V, External MOSFET is IRF530*)
IRAMP
tPOR
tRISE
tLIMIT
tPWRGD
VRAMP
Ramp Pin Output Current
Time from UV to Gate Turn On
Time from Gate Turn On to VSENSE Limit
Duration of Current Limit Mode
Time from Current Limit to PWRGD
Voltage on Ramp Pin in Current Limit Mode
10
µA
ms
µs
ms
ms
V
ms
µs
s
VSENSE = 0V
(See Note 1)
2.0
400
5.0
5.0
3.6
100
(See Note 2)
tSTARTLIMIT Start Up Time Limit
tCBTRIP Circuit Breaker Delay Time
tAUTO Automatic Restart Delay TIme
80
2.0
120
5.0
May be extended by external RC circuit
16
Power Good Output (Referenced to VEE pin)
VPWRGD(hi)
VPWRGD(lo)
IPWRGD(lk)
Applied Voltage to PWRGD
PWRGD Low Voltage
Maximum Leakage Current
90
V
V
µA
PWRGD=Inactive
IPWRGD = 1mA, PWRGD=Active
PWRGD=Inactive, VPWRGD=90
0.5
<1.0
0.8
10
Dynamic Characteristics
tGATEHLOV OV Comparator Transition
tGATEHLUV UV Comparator Transition
500
500
ns
ns
Note 1: This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.
Note 2: This voltage depends on the characteristics of the external N-Channel MOSFET. Vth = 3V for an IRF530.
* IRF530 is a registered trademark of International Rectifier.
2