HV256
Diode
Symbol
Parameter
Peak inverse voltage
Typ
Units
Condition
cathode to anode
Min
Max
PIV
VF
IF
5.0
V
V
Forward diode drop
If=100µA, anode to cathode
anode to cathode
0.60
µA
Forward diode current
VF temperature coefficient
100
mV/˚C
TC
-2.20
anode to cathode
Power Up/Down Sequence
The device can be damaged due to improper power up / down
sequence. To prevent damage, please follow the acceptable
powerup/downsequencesandaddtwoexternaldiodesasshown
in the diagram below. The first diode is a high voltage diode
across VPP and VDD where the anode of the diode is connected
to VDD and the cathode of the diode is connected to Vpp. Any low
current high voltage diode such as a 1N4004 will be adequate.
TheseconddiodeisaschottkydiodeacrossVNN andDGndwhere
the anode of the schottky diode is connected to VNN and the
cathode is connected to DGnd. Any low current schottky diode
such as a 1N5817 will be adequate.
V
VPP
DD
NN
AcceptablePowerUpSequences
1N4004
or similar
1) VPP
or
2)VNN
3) VDD
3) VPP
4) Inputs & Anode
4) Inputs & Anode
1)VNN
2) VDD
V
PGND
AcceptablePowerDownSequences
1N5817
or similar
1) Inputs & Anode
or
1) Inputs & Anode
2) VDD
3)VNN
3) VDD
4) VPP
2) VPP
4)VNN
Pin Description
VPP
High voltage positive supply. There are two pads.
A low voltage 1.0 to 10nF decoupling capacitor across VPP and BYP-VPP is
required.
B
YP-VPP
VDD
Analog low voltage positive supply. There are four pads.
A low voltage 1.0 to 10nF decoupling capacitor across VDD and BYP-VDD is
required.
B
YP-VDD
VNN
Analog low voltage negative suply. There are four pads.
A low voltage 1.0 to 10nF decoupling capacitor across VNN and BYP-VNN is
required.
BYP-VNN
GND
Device ground. There are four pads.
External resistor from RSOURCE to VNN sets output current sourcing limit.
Current limit is approximately 12.5V divided by Rsource resistor value.
RSOURCE
External resistor from RSINK to VNN sets output current sinking limit. Current
limit is approximately 12.5V divided by RSINK resistor value.
RSINK
Anode side of a low voltage silicon diode that can be used to monitor die
temperature.
Anode
Cathode
Cathode side of a low voltage silicon diode that can be used to monitor die
temperature.
VIN0 to VIN31
Amplifie.r inputs
Amplifier outpu.ts
HVOUT0 to HVOUT31
3
A112304