HV100/HV101
Functional Description
Insertion into Hot Backplanes
After completion of a full POR period, the MOSFETgate auto-
adapt operation begins. A reference current source is turned
on which begins to charge an internal capacitor generating
a ramp voltage which rises at a slew rate of 2.5 V/ms. This
reference slew rate is used by a closed loop system to gen-
erate a GATE output current to drive the gate of the external
N-channel MOSFET with a slew rate that matches the refer-
ence slew rate. Before the gate crosses a reference voltage,
which is well below the VTH of industry standard MOSFETs,
the pull-up current value is stored and the auto-adapt loop
is opened. This stored pull-up current value is used to drive
the gate during the remainder of the hot swap period. The
result is a normalization with CꢁSS , which for most MOSFETs
Telecom, data network and some computer applications
require the ability to insert and remove circuit cards from
systems without powering down the entire system. Since all
circuit cards have some filter capacitance on the power rails,
which is especially true in circuit cards or network terminal
equipment utilizing distributed power systems, the insertion
can result in high inrush currents that can cause damage to
connector and circuit cards and may result in unacceptable
disturbances on the system backplane power rails.
The HV±11 and HV±1± are designed to facilitate the insertion
and removal of these circuit cards or connection of terminal
equipment by eliminating these inrush currents and powering
up these circuits in a controlled manner after full connector
insertion has been achieved. The HV±11 and HV±1± are
intended to provide this control function on the negative sup-
ply rail.
scales with CRSS
.
The MOSFET gate is charged with a current source until it
reaches its turn on threshold and starts to charge the load
capacitor. At this point the onset of the Miller Effect causes
the effective capacitance looking into the gate to rise, and
the current source charging the gate will have little effect on
the gate voltage. The gate voltage remains essentially con-
stant until the output capacitor is fully charged. At this point
the voltage on the gate of the MOSFET continues to rise to
a voltage level that guarantees full turn on of the MOSFET.
ꢁt will remain in the full on state until an input under voltage
condition is detected.
Description of Operation
On initial power application the high input voltage internal
regulator seeks to provide a regulated supply for the internal
circuitry. Untiltheproperinternalvoltageisachievedallcircuits
are held reset by the internal UVLO and the gate to source
voltage of the external N-channel MOSFET is held off. Once
the internal regulator voltage exceeds the UVLO threshold,
the input undervoltage detection circuit (UV) senses the input
voltage to confirm that it is above the internally programmed
threshold. ꢁf at any time the input voltage falls below the UV
threshold, all internal circuitry is reset and the GATE output
is pulled down to VNN. UVLO detection works in conjunction
with a power on reset (POR) timer of approximately 3.5ms to
overcome contact bounce. Once the UVLO is satisfied, the
gate is held to VNN until a POR timer expires. Should the UV
monitor toggle before the POR timer expires, the POR timer
will be reset. This process will be repeated each time UVLO
is satisfied until a full POR period has been achieved.
ꢁf the circuit attempts turn on into a shorted load, then the
MillerEffectwillnotoccur.Thegatevoltagewillcontinuetorise
essentially at the same rate as the reference ramp indicating
that a short circuit exists. This is detected by the control circuit
and results in turning off the MOSFET initiating a 2.5 second
delay, after which a normal restart is attempted.
ꢁf at any time during the start up cycle or thereafter, the input
voltage falls below the UV threshold the GATE output will
be pulled down to V , turning off the N-channel MOSFET
and all internal circuiNtrNy is reset. A normal restart sequence
will be initiated once the input voltage rises above the UVLO
threshold plus hysteresis.
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SUPERTEX [ Supertex, Inc ]
