DN3545
Thermal Characteristics
ID
ID
Power Dissipation
@TA = 25OC
θjc
θja
1
Package
IDR
IDRM
(continuous)1
136mA
(pulsed)
552mA
552mA
OC/W
OC/W
T2-9±
2.74W
1.6W±
1±5
15
172
78±
136mA
±22mA
552mA
552mA
TO-±43AA
±22mA
Notes:
1. ID (continuous) is limited by max rated T.
2. Mounted on FR4 board, 25mm x 25mmjx 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@25OC unless otherwise specified)
Symbol Parameter
Min
Typ
Max
Units Conditions
BVDSX
Drain-to-source breakdown voltage
452
-
-
-
-
-
-
V
VGS = -5V, ID = 122µA
VGS(OFF) Gate-to-source OFF voltage
ΔVGS(OFF) Change in VGS(OFF) with temperature
-1.5
-3.5
4.5
122
1.2
V
VDS = ±5V, ID= 12µA
-
-
-
mV/OC VDS = ±5V, ID= 12µA
IGSS
Gate body leakage current
nA
µA
VGS = ± ±2V, VDS = 2V
VGS = -5V, VDS = Max Rating
ID(OFF)
Drain-to-source leakage current
V
= -5V, VDS = 2.8 Max Rating
TAGS= 1±5°C
-
±22
-
-
-
-
1.2
-
mA
mA
Ω
IDSS
Saturated drain-to-source current
VGS = 2V, VDS = 15V
Static drain-to-source
on-state resistance
RDS(ON)
±2
VGS = 2V, ID = 152mA
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
1.1
-
%/OC VGS = 2V, ID = 152mA
Ω
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transductance
Input capacitance
152
-
m
ID = 122mA, VDS = 12V
-
-
-
-
-
-
-
-
-
-
362
42
15
±2
32
32
42
1.8
-
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
-
pF
VGS = -5V, VDS = ±5V, f = 1MHz
-
-
-
VDD = ±5V, ID = 152mA,
ns
RGEN = ±5Ω,VGS = 2V to -12V
td(OFF)
tf
Turn-OFF delay time
Fall time
-
-
-
VSD
trr
Diode forward voltage drop
Reverse recovery time
V
VGS = -5V, ISD = 152mA
VGS = -5V, ISD = 152mA
822
ns
VDD
Switching Waveforms and Test Circuit
RL
2V
92%
PULSE
GENERATOR
INPUT
OUTPUT
12%
-12V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
2V
INPUT
12%
12%
OUTPUT
92%
92%
±
SUPERTEX [ Supertex, Inc ]
