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DN3135NW 参数 Datasheet PDF下载

DN3135NW图片预览
型号: DN3135NW
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道耗尽型垂直DMOS场效应管 [N-Channel Depletion-Mode Vertical DMOS FETs]
分类和应用: 晶体小信号场效应晶体管开关
文件页数/大小: 2 页 / 445 K
品牌: SUPERTEX [ Supertex, Inc ]
 浏览型号DN3135NW的Datasheet PDF文件第1页  
DN3135  
Thermal Characteristics  
Package  
ID (continuous)*  
ID (pulsed)  
Power Dissipation  
θjc  
θja  
IDR  
*
IDRM  
@ TA = 25°C  
°C/W  
°C/W  
TO-236AB  
TO-243AA  
72mA  
300mA  
300mA  
0.36W  
1.3W †  
200  
34  
350  
97†  
72mA  
300mA  
300mA  
135mA  
135mA  
* ID (continuous) is limited by max rated Tj.  
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.  
Electrical Characteristics (@ 25°C unless otherwise specified)  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
Conditions  
BVDSX  
Drain-to-Souce Breakdown Voltage  
350  
V
VGS = -5.0V, ID = 100µA  
VDS = 15V, ID = 10µA  
VDS = 15V, ID = 10µA  
VGS = ±20V, VDS = 0V  
VGS(OFF)  
VGS(OFF)  
IGSS  
Gate-to-Source OFF Voltage  
Change in VGS(OFF) with Temperature  
Gate Body Leakage Current  
-1.5  
-3.5  
4.5  
100  
1.0  
1.0  
V
mV/°C  
nA  
ID(OFF)  
Drain-to-Source Leakage Current  
µA  
VGS = -5.0V, VDS = Max Rating  
mA  
VGS = -5.0V, VDS = 0.8 Max Rating  
TA = 125°C  
IDSS  
Saturated Drain-to-Source Current  
180  
140  
mA  
VGS = 0V, VDS = 15V  
VGS = 0V, ID = 150mA  
VGS = -0.8V, ID = 50mA  
VGS = 0V, ID = 150mA  
ID = 100mA, VDS=10V  
RDS(ON)  
Static Drain-to-Source  
ON-State Resistance  
35  
35  
RDS(ON)  
GFS  
Change in RDS(ON) with Temperature  
Forward Transconductance  
Input Capacitance  
1.1  
%/°C  
mm  
CISS  
COSS  
CRSS  
td(ON)  
tr  
60  
6.0  
3.0  
120  
15  
10  
10  
15  
15  
20  
1.8  
VGS = -5.0V, VDS = 25V,  
f =1.0Mhz  
Common Source Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
pF  
ns  
VDD = 25V,  
Rise Time  
ID = 150mA,  
td(OFF)  
tf  
Turn-OFF Delay Time  
Fall Time  
RGEN = 25,  
VGS = 0V to -10V  
VGS = -5.0V, ISD = 150mA  
VGS = -5.0V, ISD = 150mA  
VSD  
Diode Forward Voltage Drop  
Reverse Recovery Time  
V
trr  
800  
ns  
Notes:  
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
2. All A.C. parameters sample tested.  
VDD  
Switching Waveforms and Test Circuit  
RL  
0V  
90%  
PULSE  
GENERATOR  
INPUT  
OUTPUT  
10%  
-10V  
Rgen  
t(ON)  
td(ON)  
t(OFF)  
td(OFF)  
tr  
tF  
D.U.T.  
VDD  
0V  
INPUT  
10%  
10%  
OUTPUT  
90%  
90%  
10/23/00  
1235 Bordeaux Drive, Sunnyvale, CA 94089  
TEL: (408) 744-0100 • FAX: (408) 222-4895  
www.supertex.com