DN3135
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TA = 25°C
°C/W
°C/W
TO-236AB
TO-243AA
72mA
300mA
300mA
0.36W
1.3W †
200
34
350
97†
72mA
300mA
300mA
135mA
135mA
* ID (continuous) is limited by max rated Tj.
†
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BVDSX
Drain-to-Souce Breakdown Voltage
350
V
VGS = -5.0V, ID = 100µA
VDS = 15V, ID = 10µA
VDS = 15V, ID = 10µA
VGS = ±20V, VDS = 0V
VGS(OFF)
∆VGS(OFF)
IGSS
Gate-to-Source OFF Voltage
Change in VGS(OFF) with Temperature
Gate Body Leakage Current
-1.5
-3.5
4.5
100
1.0
1.0
V
mV/°C
nA
ID(OFF)
Drain-to-Source Leakage Current
µA
VGS = -5.0V, VDS = Max Rating
mA
VGS = -5.0V, VDS = 0.8 Max Rating
TA = 125°C
IDSS
Saturated Drain-to-Source Current
180
140
mA
Ω
VGS = 0V, VDS = 15V
VGS = 0V, ID = 150mA
VGS = -0.8V, ID = 50mA
VGS = 0V, ID = 150mA
ID = 100mA, VDS=10V
RDS(ON)
Static Drain-to-Source
ON-State Resistance
35
35
∆RDS(ON)
GFS
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
1.1
%/°C
Ω
mm
CISS
COSS
CRSS
td(ON)
tr
60
6.0
3.0
120
15
10
10
15
15
20
1.8
VGS = -5.0V, VDS = 25V,
f =1.0Mhz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
ns
VDD = 25V,
Rise Time
ID = 150mA,
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
RGEN = 25Ω,
VGS = 0V to -10V
VGS = -5.0V, ISD = 150mA
VGS = -5.0V, ISD = 150mA
VSD
Diode Forward Voltage Drop
Reverse Recovery Time
V
trr
800
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
RL
0V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
-10V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
10/23/00
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
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