DN2470
Thermal Characteristics
ID
ID
Power Dissipation
@TA = 25OC
1
Package
Θjc (OC/W) Θja (OC/W)
IDR
170mA
IDRM
(continuous)1
(pulsed)
TO-252
170mA
500mA
2.5W2
6.25
502
500mA
Notes:
1. ID (continuous) is limited by max rated Tj.
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm
Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
-
Units
V
Conditions
BVDSX
Drain-to-source breakdown voltage
700
-
-
-
-
-
VGS = -5.0V, ID = 100µA
VDS = 25V, ID = 10µA
VGS(OFF) Gate-to-source OFF voltage
-1.5
-3.5
4.5
100
1.0
V
ΔVGS(OFF) Change in VGS(OFF) with temperature
-
-
-
mV/OC VDS = 25V, ID = 10µA
IGSS
Gate body leakage current
nA
µA
VGS = 20V, VDS = 0V
VDS = Max rating, VGS = -10V
ID(OFF)
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source ON-state
resistance
V
DS = 0.8 Max Rating,
-
-
-
-
500
-
1.0
-
mA
mA
Ω
VGS = -10V, TA = 125OC
VGS = 0V, VDS = 25V
IDSS
RDS(ON)
42
VGS = 0V, ID = 100mA
VGS = 0V, ID = 100mA
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
1.1
-
%/OC
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transconductance
Input capacitance
100
-
mmho VDS = 10V, ID = 100mA
-
-
-
-
-
-
-
-
-
-
540
60
25
30
45
45
60
1.8
-
VGS = -10V, VDS = 25V,
f = 1MHz
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
-
pF
-
-
VDD = 25V,
ID = 100mA,
RGEN = 25Ω,
Rise time
-
ns
td(OFF)
tf
Turn-OFF delay time
Fall time
-
-
-
VSD
Diode forward voltage drop
Reverse recovery time
V
VGS = -5.0V, ISD = 200mA
VGS = -5.0V, ISD = 200mA
trr
800
ns
Notes:
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
0V
90%
INPUT
PULSE
GENERATOR
10%
-10V
OUTPUT
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
tr
tF
VDD
0V
D.U.T.
10%
10%
INPUT
OUTPUT
90%
90%
2
SUPERTEX [ Supertex, Inc ]
