DN2470
Thermal Characteristics
Power Dissipation
@ TA=25°C
2.5W**
θJC
°C/W
6.25
θJA
°C/W
50**
Package
ID(continuous)
*
ID(pulsed)
IDR*
IDRM
TO-252
170mA
500mA
170mA
500mA
* ID(continuous) is limited by maximum rated TJ of 150°C
** Mounted on FR4, 25mm x 25mm x 1.57mm
Electrical Characteristics (@25°C unless otherwise specified)
Symbol Parameter
Min
700
-1.5
Typ
Max
Units Conditions
Drain-to-Source
Breakdown Voltage
BVDSX
V
VGS=-5V, ID=100µA
VGS(OFF)
∆VGS(OFF)
IGSS
Gate-to-Source OFF Voltage
Change in VGS(OFF) with Temperature
Gate Body Leakage
-3.5
4.5
100
1.0
V
VDS=25V, ID=10µA
mV/°C VDS=25V, ID=10µA
nA
µA
VGS=±20V, VDS=0V
VGS=-10V, VDS=Max Rating
VGS=-10V, VDS=0.8 Max
Rating, TA=125°C
ID(OFF)
Drain-to-Source Leakage Current
1.0
mA
IDSS
Saturated Drain-to-source Current
Static Drain-to-Source ON-State Resistance
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
500
mA
Ω
VGS=0V, VDS=25V
VGS=0V, ID=100mA
RDS(ON)
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
td(OFF)
tf
VSD
trr
Notes:
42
1.1
%/°C VGS=0V, ID=100mA
mmho ID=100mA, VDS=10V
100
540
60
25
30
45
45
60
1.8
VGS=-10V, VDS=25V
f=1MHz
pF
VDD=25V,
ID=100mA,
ns
R
GEN=25 Ω
V
ns
VGS=0V, ISD=200mA
VGS=0V, ISD=200mA
800
1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)
2) All AC parameters sample tested.
VDD
Switching Waveforms and Test Circuit
0V
90%
RL
Input
Pulse
10%
OUTPUT
Generator
RGEN
-10V
VDD
t(ON)
t(OFF)
td(ON)
tr
td(OFF)
tf
D.U.T
Input
10%
10%
90%
Output
90%
0V
Doc# DSFP-DN2470
NR011905
Rev. 1 011105
2