DN1509
Electrical Characteristics (TA=25°C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
-
Units
V
Conditions
BVDSX
Drain-to-source breakdown voltage
90
-
-
-
-
-
VGS = -5V, ID = 1.0µA
ID = 10µA
VGS(OFF) Gate-to-source OFF voltage
-1.8
-3.5
4.5
100
1.0
V
ΔVGS(OFF) VGS(OFF) change with temperature
-
-
-
mV/OC VDS = 15V, ID = 10µA
IGSS
Gate body leakage
nA
µA
VGS = ±±0V, VDS = 0V
VDS = Max rating, VGS = -5.0V
ID(OFF)
Drain-to-source leakage current
VDS = 0.8 Max Rating,
VGS = -5.0V, TA = 1±5OC
-
-
1.0
mA
IDSS
Saturated drain-to-source current
300
540
3.±
-
-
6.0
1.1
-
mA
Ω
%/OC
VGS = 0V, VDS = ±5V
VGS = 0V, ID = ±00mA
VGS = 0V, ID = ±00mA
RDS(ON)
Static drain-to-source ON-state resistance
-
ΔRDS(ON) Change in RDS(ON) with temperature
-
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transconductance
Input capacitance
±00
-
mmho VDS = 10V, ID = ±00mA
-
-
-
-
-
-
-
-
-
70
±0
6.0
1±
16
15
±5
-
150
40
15
30
45
45
60
1.8
-
VGS = -10V, VDS = ±5V,
f = 1MHz
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
pF
VDD = ±5V,
ID = 100mA,
RGEN = ±5Ω
Rise time
ns
td(OFF)
tf
Turn-OFF delay time
Fall time
VSD
Diode forward voltage drop
Reverse recovery time
V
VGS = 0V, ISD = 500mA
VGS = 0V, ISD = 500mA
trr
400
ns
Notes:
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Thermal Characteristics
θJC
θJA
ID
ID
Power Dissipation
†
Package
IDR
IDRM
(pulsed)
@TA = 25OC
(continuous)†
(OC/W)
(OC/W)
TO-±43AA
360mA
500mA
1.6W‡
15
78‡
360mA
500mA
Notes:
† ID (continuous) is limited by max rated TJ of 150OC.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Switching Waveforms and Test Circuit
VDD
0V
90%
Input
RL
10%
Pulse
-10V
OUTPUT
Generator
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tf
RGEN
VDD
0V
D.U.T
10%
10%
90%
Output
Input
90%
±
SUPERTEX [ Supertex, Inc ]
