SMD Signal DMOS Transistor (N-Channel)
2N7002
Electrical Characteristics (T Ambient=25ºC) (Note 3)
Symbol
Vth
Description
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
Conditions
1.1
1.8
1.2
2.3
1.8
2.1
0.9
0.105
-
V
V
DS= VGS, ID=250μA
-
V
GS=10V, ID=500mA
GS=5V, ID=50mA
GS=10V, ID=500mA
GS=5V, ID=50mA
GS=10V, VDS ≥2VDS(ON)
VDS=10V, ID=500mA
Drain-Source ON Resistance
Drain-Source ON Voltage
RDS(ON)
VDS(ON)
Ω
-
1.5
V
-
-
0.6
V
V
0.075
-
V
On State Drain Current
500
200
-
mA
mS
V
V
ID(ON)
gFS
580
0.78
-
Forward Transconductance
1.15
V
GS=0V, IS=200mA
Drain-Source Diode Forward Voltage (Note 1)
VSD
Dynamic Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
Input Capacitance
Min.
Typ.
Max.
Unit
Conditions
-
-
-
-
-
47.1
3.5
-
-
-
-
-
Ciss
Crss
Coss
ton
V
DS= 25V, VGS = 0V,
pF
Reverse Transfer Capacitance
Output Capacitance
f=1MHz
8.8
Switching Time Turn-On Time
Switching Time Turn-Off Time
8.8
V
DD=30V, RL=155Ω
ID=190mA, VGS=10V
nS
14.8
toff
Note: (1) Pulse Width≤10us, Duty Cycle≤1%
(2) Package mounted on a glass epoxy PCB 3.94’’ x 3.94’’ x 0.04’’
(3) Pulse Test: Pulse Width≤80μs, Duty Cycle≤1%
Switching Time Test Circuit
Rev. A/JX 2007-12-22
Page 2 of 7
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