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1N5908 参数 Datasheet PDF下载

1N5908图片预览
型号: 1N5908
PDF下载: 下载PDF文件 查看货源
内容描述: TRANSILTM [TRANSILTM]
分类和应用: 瞬态抑制器二极管
文件页数/大小: 6 页 / 74 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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®
1N5908
SM5908
TRANSIL
TM
FEATURES
UNIDIRECTIONAL TRANSIL DIODE
PEAK PULSE POWER : 1500 W (10/1000µs)
REVERSE STAND OFF VOLTAGE : 5 V
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
The 1N5908 and SM5908 are dedicated to the 5 V
logiccircuit protection(TTL and CMOS technologies).
Their low clamping voltage at high current level
guarantees excellent protection for sensitive
components.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C).
Symbol
P
PP
P
I
FSM
T
stg
Tj
T
L
Parameter
Peak pulse power dissipation (see note1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current
for unidirectional types
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering
during 10s (at 5mm from case for CB429)
CB429
SMC
Tj initial = T
amb
T
amb
= 75°C
t
p
= 10ms
T
j
initial = T
amb
Value
1500
5
200
- 65 to + 175
175
230
260
Unit
W
W
A
°C
°C
°C
°C
CB429
SMC
Note 1
: For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
R
th (j-l)
R
th (j-a)
Junction to leads
Junction to ambient
on printed circuit.
L lead = 10 mm
On recommended pad layout
CB429
SMC
Parameter
Value
20
75
75
Unit
°C/W
°C/W
°C/W
August 1999 Ed : 2A
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