1N582x
Fig. 2-1:
Average forward current versus ambient
temperature (δ=0.5) (1N5820/1N5821).
IF(av)(A)
3.5
Rth(j-a)=Rth(j-l)=25°C/W
Fig. 2-2:
Average forward current versus ambient
temperature (δ=0.5) (1N5822).
IF(av)(A)
3.5
Rth(j-a)=Rth(j-l)=25°C/W
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
δ
=tp/T
T
Rth(j-a)=80°C/W
3.0
2.5
2.0
1.5
1.0
0.5
T
Rth(j-a)=80°C/W
tp
Tamb(°C)
50
75
100
125
150
0.0
δ
=tp/T
tp
Tamb(°C)
25
0
25
50
75
100
125
150
Fig. 3-1:
Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5820/1N5821).
IM(A)
16
14
12
10
8
6
4
I
M
Fig. 3-2:
Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5822).
IM(A)
12
11
10
9
8
7
6
5
4
3
I
M
2
1
0
1E-3
Ta=25°C
Ta=25°C
Ta=75°C
Ta=75°C
Ta=100°C
t
Ta=100°C
2
0
1E-3
δ
=0.5
t(s)
1E-2
1E-1
1E+0
t
δ
=0.5
t(s)
1E-2
1E-1
1E+0
Fig. 4:
Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
Zth(j-a)/Rth(j-a)
Fig. 5:
Junction capacitance versus reverse
voltage applied (typical values).
1.0
0.8
0.6
0.4
600
C(pF)
F=1MHz
Tj=25°C
1N5820
1N5821
1N5822
δ
= 0.5
100
δ
= 0.2
T
0.2
δ
= 0.1
Single pulse
tp(s)
1E+0
1E+1
δ
=tp/T
tp
VR(V)
10
1
2
5
10
20
40
0.0
1E-1
1E+2
1E+3
3/5
STMICROELECTRONICS [ STMICROELECTRONICS ]
