STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Table 3: Absolute Maximum ratings
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
dv/dt (1)
T
j
T
stg
Parameter
DPAK / IPAK
Value
TO-92
SOT-223
Unit
V
V
V
0.4
0.25
1.6
3.3
0.025
A
A
A
W
W/°C
V/ns
°C
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
1.0
0.63
4
30
0.24
600
600
± 30
0.4
0.25
1.6
3
0.025
3
-55 to 150
( ) Pulse width limited by safe operating area
(1) I
SD
≤1.0A,
di/dt
≤100A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Table 4: Thermal Data
DPAK/IPAK
Rthj-case
Rthj-amb
Rthj-lead
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
4.16
100
--
275
TO-92
--
120
40
260
SOT-223
--
37.87 (#)
--
Unit
°C/W
°C/W
°C/W
°C
(#) When mounted on FR-4 board of 1 in
2
, 2oz Cu, t < 10 sec
Table 5: Avalanche Characteristics
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
1
25
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
I
D
= 1mA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ± 30V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10V, I
D
= 0.5 A
2.25
3
8
Min.
600
1
50
±100
3.7
8.5
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
2/15
STMICROELECTRONICS [ STMICROELECTRONICS ]
