Electrical characteristics
STD100N3LF3 - STU100N3LF3
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Test conditions
I
D
= 250µA, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating @125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 40A
V
GS
= 5V, I
D
= 20A
Static drain-source on
resistance
V
GS
= 10 V,
I
D
= 40 A @125°C
V
GS
= 5 V,
I
D
= 20 A @125°C
1
0.0045 0.0055
0.008
0.01
Min.
30
1
10
±200
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Ω
Ω
Ω
R
DS(on)
0.0068
0.0146
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 10 V
,
I
D
= 15A
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
V
DD
= 24V, I
D
= 80A
V
GS
= 5V
f = 1MHz gate DC Bias = 0
Test signal level = 20mV
Open drain
Min.
Typ.
31
2060
728
67
20
7
7.5
27
Max.
Unit
S
pF
pF
pF
nC
nC
nC
Ω
Gate input resistance
1.9
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/15
STMICROELECTRONICS [ STMICROELECTRONICS ]
