STP9547
P Channel Enhancement Mode MOSFET
6.8A
-
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=-250uA
-40
V
V
VDS=VGS,ID=-
250uA
-1.0
-3.0
±100
-1
Gate Leakage Current
VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=-24V,VGS=0V
uA
-5
TJ=85℃
On-State Drain
Current
Drain-source On-
Resistance
Forward
Transconductance
ID(on)
RDS(on)
gfs
VDS=-5V,VGS=-4.5V
-10
A
mΩ
S
VGS=-10V,ID=-5.6A
VGS=-4.5V,ID=-5.2A
47
62
60
80
VDS=-15V,ID=-5.6V
IS=-2.3A,VGS=0V
13
Diode Forward Voltage
VSD
-0.8
-1.2
24
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
16
2.3
4.5
VDS=-15V,VGS=-10V
Gate-Source Charge
ID≡-3.5A
nC
pF
Gate-Drain Charge
Input Capacitance
Ciss
680
120
VDS ==-15V,VGS=0V
f=1MHz
Output Capacitance
Coss
Reverse
TransferCapacitance
Crss
75
14
25
td(on)
tr
Turn-On Time
Turn-Off Time
VDD=-15V,RL=15Ω
ID=-1A,VGEN=-10V
RG=6Ω
16
43
30
26
70
52
nS
td(off)
tf
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9547 2007. Rev.1
STANSON [ STANSON TECHNOLOGY ]
