STP9547
P Channel Enhancement Mode MOSFET
6.8A
-
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25 unless otherwise noted )
Parameter
Drain-Source Voltage
Symbol
Typical
-40
Unit
VDSS
V
V
Gate-Source Voltage
VGSS
ID
±20
TA=25℃
Continuous Drain Current
-6.8
-5.2
A
℃
(TJ=150 )
℃
TA=70
Pulsed Drain Current
IDM
IS
-30
A
Continuous Source Current (Diode Conduction)
-2.3
A
TA=25℃
2.5
1.6
Power Dissipation
PD
W
℃
℃
℃
TA=70
Operation Junction Temperature
Storage Temperature Range
TJ
150
-55/150
70
TSTG
RθJA
℃
/W
Thermal Resistance-Junction to Ambient
2
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9547 2007. Rev.1
STANSON [ STANSON TECHNOLOGY ]
