ST9402
N Channel Enhancement Mode MOSFET
3.6A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=-250uA
VDS=VGS,ID=250uA
20
V
V
Gate Threshold Voltage
0.4
1.2
±
±
VDS=0V,VGS= 12V
100
1
Gate Leakage Current
nA
VDS=20V,VGS=0V
VDS=20V,VGS=0V
Zero Gate Voltage Drain
Current
IDSS
uA
10
℃
TJ=55
≧
VDS 5V,VGS=4.5V
6
4
On-State Drain Current
ID(on)
A
≧
VDS 5V,VGS=2.5V
VGS=4.5V,ID=3.6A
VGS=2.5V,ID=3.1A
0.075 0.085
0.080 0.090
Ω
Drain-source On-Resistance
RDS(on)
gfs
Forward Transconductance
Diode Forward Voltage
Dynamic
VDS=5V,ID=3.6V
IS=1.6A,VGS=0V
10
S
V
VSD
0.85 1.2
Total Gate Charge
Qg
Qgs
Qgd
5.4
0.65
1.4
10
VDS=10V
VGS=4.5V
ID 3.6A
Gate-Source Charge
nC
pF
≣
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Ciss
Coss
340
115
VDS=10V
VGS=0V
F=1MHz
Crss
33
12
25
VDD=10V
td(on)
Turn-On Time
Turn-Off Time
Ω
RL=5.5
tr
36
34
10
60
60
25
ID=3.6A
VGEN=4.5V
nS
td(off)
tf
Ω
RG=6
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST9402 2005. V1