ST7400
N Channel Enhancement Mode MOSFET
2.8A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
DrainꢀSource Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
30
V
V
Gate Threshold Voltage
VDS=V ,ID=250uA
0.8
1.6
GS
±
±
100
VDS=0V,VGS= 12V
Gate Leakage Current
nA
VDS=24V,VGS=0V
VDS=24V,VGS=0V
1
Zero Gate Voltage Drain
Current
IDSS
uA
A
5
℃
TJ=85
≦
VDS ꢀ5V,VGS=ꢀ4.5V
OnꢀState Drain Current
ID(on)
4.0
VGS=10V,ID=2.8A
VGS=4.5V,ID=2.3A
VGS=2.5V,ID=1.5A
77
85
110
62
70
95
Ω
m
Drainꢀsource OnꢀResistance
RDS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
gfs
VDS=5V,ID=4.0V
IS=1.0A,VGS=0V
4
S
V
VSD
0.8 1.2
Total Gate Charge
GateꢀSource Charge
GateꢀDrain Charge
Qg
Qgs
Qgd
4.2
0.6
1.5
VDS=15V
VGS=4.5V
IDꢀ2.0A
nC
pF
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Ciss
Coss
380
55
VDS=15V
VGS=0V
F=1MHz
Crss
40
2.5
2.5
20
5
VDS=15V
ID=1A
td(on)
TurnꢀOn Time
TurnꢀOff Time
tr
Ω
Ω
RL=15
nS
RG=3
=10V
td(off)
tf
V
GEN
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST7400 2005. V1
STANSON [ STANSON TECHNOLOGY ]
