N Channel Enhancement Mode MOSFET
ST3414
4.0A
DESCRIPTION
ST3414 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology.This high density
process is especially tailored to minimize on-state resistance.These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
20V/4.2A, R
DS(ON)
= 40mΩ ( Typ.)
@VGS = 4.5V
20V/3.4A, R
DS(ON)
= 55 mΩ
@VGS = 2.5V
20V/2.8A, R
DS(ON)
= 75 mΩ
@VGS = 1.8V
Super high density cell design for extremely
low R
DS(ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
PART MARKING
SOT-23-3L
3
14YA
1
Y: Year Code
2
A: Week Code
ORDERING INFORMATION
Part Number
ST3414S23RG
Package
SOT-23
Part Marking
14YA
※
Week Code : A ~ Z ; a ~ z
※
ST3414S23RG : S23 : SOT23-3L
R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3414 2006. V1
STANSON [ STANSON TECHNOLOGY ]
