ST3402
N Channel Enhancement Mode MOSFET
4A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=-250uA
VDS=VGS,ID=250uA
30
V
V
Gate Threshold Voltage
0.8
1.6
±
±
VDS=0V,VGS= 12V
100
1
Gate Leakage Current
nA
VDS=24V,VGS=0V
VDS=24V,VGS=0V
Zero Gate Voltage Drain
Current
IDSS
uA
A
10
℃
TJ=55
≧
On-State Drain Current
ID(on)
VDS 4.5V,VGS=4.5V
4
VGS=10V,ID=2.8A
VGS=4.5V,ID=4.5A
VGS=2.5V,ID=1.5A
48
53
80
58
65
105
Ω
m
Drain-source On-Resistance
RDS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
gfs
VDS=4.5V,ID=5.8A
IS=1.25A,VGS=0V
12
S
VSD
0.8 1.2
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
4.2
0.6
1.5
6
VDS=15V
VGS=4.5V
ID 2.0A
nC
pF
≣
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
350
55
VDS=15V
VGS=0V
F=1MHz
Reverse Transfer Capacitance
41
2.5
VDD=15V
RL=10
ID=1.0A
VGEN=10V
td(on)
Turn-On Time
Turn-Off Time
Ω
tr
2.5
20
4
nS
td(off)
tf
Ω
RG=3
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3402 2006. V1
STANSON [ STANSON TECHNOLOGY ]
