ST3407SRG
P Channel Enhancement Mode MOSFET
ꢀ3.6A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
DrainꢀSource Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=ꢀ250uA
ꢀ30
V
V
Gate Threshold Voltage
VDS=VGS,ID=ꢀ250uA ꢀ1.0
ꢀ3.0
±
±
100
VDS=0V,VGS= 20V
Gate Leakage Current
Na
VDS=ꢀ24V,VGS=0V
VDS=ꢀ24V,VGS=0V
ꢀ1
Zero Gate Voltage Drain
Current
IDSS
UA
ꢀ9.5
℃
TJ=55
VGS=ꢀ10.0V,ID=ꢀ4.0A
VGS=ꢀ4.5V,ID=ꢀ3.2A
54
72
Ω
m
Drainꢀsource OnꢀResistance
RDS(on)
gfs
Forward Transconductance
Diode Forward Voltage
Dynamic
VDS=ꢀ5.0V,ID=ꢀ4.0A
IS=ꢀ1.0A,VGS=0V
10
S
VSD
ꢀ0.8 ꢀ1.2
V
Total Gate Charge
GateꢀSource Charge
GateꢀDrain Charge
Qg
Qgs
Qgd
14
1.9
3.7
21
VDS=ꢀ15V
VGS=ꢀ10V
ID ꢀ4.0A
nC
pF
≡
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
540
131
105
VDS=ꢀ15V
VGS=0V
F=1MHz
Reverse Transfer Capacitance
10
16
VDD=ꢀ15V
td(on)
TurnꢀOn Time
TurnꢀOff Time
Ω
RL=15
tr
16
32
21
25
50
32
ID=ꢀ1.0A
nS
VGEN=ꢀ10V
td(off)
tf
Ω
RG=6
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407SRG 2006. V1