ST3400SRG
N Channel Enhancement Mode MOSFET
5.8A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
DrainꢀSource Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
30
V
V
Gate Threshold Voltage
0.5
1.5
±
±
100
VDS=0V,VGS= 12V
Gate Leakage Current
nA
VDS=24V,VGS=0V
VDS=24V,VGS=0V
1
Zero Gate Voltage Drain
Current
IDSS
uA
10
℃
TJ=55
VGS=10V,ID=5.8A
VGS=4.5V,ID=4.8A
VGS=2.5V,ID=4.0A
25
30
40
Ω
m
Drainꢀsource OnꢀResistance
RDS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
gfs
VDS=4.5V,ID=5.8A
IS=1.7A,VGS=0V
12
S
VSD
1.2
18
V
Total Gate Charge
GateꢀSource Charge
GateꢀDrain Charge
Qg
Qgs
Qgd
9.7
1.6
3.1
VDS=15V
VGS=10V
nC
pF
≡
ID 6.7A
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
450
240
38
VDS=15V
VGS=0V
F=1MHz
Reverse Transfer Capacitance
7
15
20
40
20
VDD=15V
td(on)
TurnꢀOn Time
TurnꢀOff Time
Ω
RL=15
tr
10
20
11
ID=1.0A
nS
VGEN=10V
td(off)
tf
Ω
RG=6
3
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400SRG 2009. V1
STANSON [ STANSON TECHNOLOGY ]
