ST2302M
N Channel Enhancement Mode MOSFET
3.6A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
20
V
V
Gate Threshold Voltage
0.5
1.2
±
±
VDS=0V,VGS= 12V
100
1
Gate Leakage Current
nA
VDS=20V,VGS=0V
VDS=20V,VGS=0V
Zero Gate Voltage Drain
Current
IDSS
uA
10
℃
TJ=55
≧
VDS 5V,VGS=4.5V
6
4
On-State Drain Current
ID(on)
A
≧
VDS 5V,VGS=2.5V
VGS=4.5V,ID=3.6A
VGS=2.5V,ID=3.1A
0.09
0.13
Ω
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
RDS(on)
gfs
VDS=5V,ID=3.6V
IS=1.6A,VGS=0V
10
S
V
VSD
0.85
1.2
10
Dynamic
Total Gate Charge
Gate-Source Charge
Qg
Qgs
Qgd
5.4
0.65
1.4
VDS=10V
VGS=4.5V
nC
pF
≣
ID 3.6A
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Ciss
Coss
340
115
VDS=10V
VGS=0V
F=1MHz
Crss
33
12
25
VDD=10V
td(on)
Turn-On Time
Turn-Off Time
Ω
RL=5.5
tr
36
34
10
60
60
25
ID=3.6A
VGEN=4.5V
nS
td(off)
tf
Ω
RG=6
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2302M 2007. V1
STANSON [ STANSON TECHNOLOGY ]
