P Channel Enhancement Mode MOSFET
ST2301M
-3.0A
DESCRIPTION
The ST2301M is the P-Channel logic enhancement mode power field effect transistor
is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other batter powered circuits, and
low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
FEATURE
-20V/-2.8A,
R
DS(ON)
= 130m-ohm (Typ.)
@V
GS
= -4.5V
-20V/-2.0A, R
DS(ON)
= 220m-ohm
@V
GS
= -2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3.Drain
3
D
G
1
1.Gate
2.Source
S
2
PART MARKING
SOT-23
3
S01YA
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
ST2301MSRG
Package
SOT-23
Part Marking
S01YA
※
Process Code : A ~ Z ; a ~ z
※
ST2301MSRG
S : SOT-23 ; R : Tape Reel ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2301M 2007. V1
STANSON [ STANSON TECHNOLOGY ]
