SFF70N10M
SFF70N10Z
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ T =25oC (Unless Otherwise Specified)
J
SYMBOL
MIN
TYP
MAX
UNIT
V
RATING
Drain to Source Breakdown Voltage
(VGS =0 V, ID = 250µA)
BV
100
-
-
DSS
Drain to Source on State Resistance
Ω
R
-
0.03
-
(VGS = 10 V,Tc = 150oC)
DS(on)
0.025
-
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
I
D(on)
A
70
Gate Threshold Voltage
(VDS = VGS, ID = 250µA)
V
2
-
4.0
-
V
GS(th)
Forward Transconductance
(VDS > ID(on) X RDS (on) Max, IDS=60% rated ID)
20
40
gf
Smho
s
Zero Gate Voltage Drain Current
-
-
-
-
250
250
I
DSS
(V = 80% rated voltage, V = 0V)
DS
GS
µA
(V = 80% rated V , V = 0V, T = 125oC)
DS
DS GS
A
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
-
-
-
-
+100
-100
At rated VGS
I
GSS
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10 V
80% rated VDS
Rated ID
Qg
Qgs
Qgd
-
-
-
110
30
50
140
40
80
nC
VDD=50%
rated VDS
ID=70A
RG=8Ω
VGS=10V
Turn on Delay Time
Rise Time
Turn off DelayTime
Fall Time
t
-
-
-
-
25
15
80
15
40
180
100
40
d (on)
tr
nsec
V
t
d (off)
tf
Diode Forvard Voltage
V
-
1.0
1.8
(I = rated I , V = 0V, T = 25oC)
SD
S
D
GS
J
TJ =25oC
IF = ID
di/dt = 100A/µsec
nsec
µC
Diode Reverse Recovery Time
Reverse Recovery Charge
t
rr
1.25
0.3
200
-
-
Q
RR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =0 Volts
VDS =25 Volts
f =1 MHz
Ciss
Coss
Crss
-
-
-
4100
1200
310
-
-
-
pF
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES:
1/ Maximum current limited by package, die rated at 70A.
SSDI [ SOLID STATES DEVICES, INC ]
